MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
LWS6080AL


SOT-23-3L MOSFETs ROHS
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Lewa Micro 2910
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AUD 0.093
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PJC7439-AU_R1_000A1


MOSFETs 60V P-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 0.0933
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BRCS1C0P06MFQ


SOT-23-6 MOSFETs ROHS
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Blue Rocket 2910
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AUD 0.0943
Multiples of: 5

                   
CJM3005


30V 5A 32mΩ@10V 1V N Channel DFNWB-6L-J(2x2) MOSFETs ROHS
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Changjing Electronics Technology 2910
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AUD 0.0952
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WM03P56M2


Transistor: P-MOSFET; unipolar; SOT23
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Wayon 2910
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AUD 0.0956
Multiples of: 1

                   
WM03N86M2


Transistor: N-MOSFET; unipolar; SOT23
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Wayon 2910
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AUD 0.0956
Multiples of: 1

                   
NCE60P05BY


SOT-23-3L MOSFETs ROHS
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NCE Power 2910
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AUD 0.0967
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DMN62D0SFD-7


Diodes Incorporated MOSFET MOSFET BVDSS
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Diodes Incorporated 2910
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AUD 0.1002
Multiples of: 3000

540 mA60 V2 OhmsN - Channel 1.6 V- 55 C+ 150 C0.89 WSmd/SmtX1 - DFN1212 - 3ReelSi1 Channel20 V0.87 nCEnhancement  
SI1308EDL-VB


20V 4A 36mΩ@10V,4A N Channel SC-70-3 MOSFETs ROHS
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VBsemi Elec 2910
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AUD 0.1003
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SL3422


60V 3A 125mΩ@20V,3A 1.25W null SOT-23 MOSFETs ROHS
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SLKORMICRO 2910
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AUD 0.1011
Multiples of: 5

                   
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