MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN2024UFDF-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 2909
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AUD 0.1675
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7.1 A20 V22 mOhmsN - Channel 0.5 V- 55 C+ 150 C1.67 WSmd/SmtU - DFN2020 - 6Cut TapeSi1 Channel10 V0.9 nCEnhancement  
NTMFS5C430NT1G


MOSFET T6D3F 40V NFET
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ON Semiconductor 2909
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AUD 0.4894
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185 A40 V1.4 mOhmsN - Channel 2.5 V- 55 C+ 175 C106 WSmd/SmtSO - FL - 8Cut TapeSi1 Channel20 V47 nCEnhancement  
PMV55ENEAR


MOSFET PMV55ENEA/TO-236AB/REEL 7" Q3/
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Nexperia 2908
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AUD 0.3271
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3.1 A60 V60 mOhmsN - Channel 1.3 V- 55 C+ 150 C1.19 WSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V12.7 nCEnhancement  
BUK7Y12-55B,115


NXP Semiconductors MOSFET N-CHANNEL TRENCHMOS STANDARD LEVEL FET
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Nexperia 2908
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AUD 0.8291
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61.8 A55 V8.2 mOhmsn - channel     smd/smtLFPAK - 4Reelsi1 channel     
P0R5B60HP2-5071


MOSFET Hi-PotMOS series Power MOSFET SMD
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Shindengen 2879
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AUD 0.4994
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            Hi - Potmos2      
RQ7P035ATTCR


MOSFETs Pch -100V -3.5A Power MOSFET
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ROHM 2835
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AUD 0.5418
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3.5 A100 V111 mOhmsP - Channel 2.5 V + 150 C1.5 WSMD/SMTT SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V40 nCEnhancement  
WM02N75M2


Transistor: N-MOSFET; unipolar; SOT23
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Wayon 2734
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AUD 0.1191
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SQJ459EP-T1_BE3


MOSFETs PowerPAK SO-8L
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Vishay 1877
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AUD 0.7848
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52 A60 V18 mOhmsP - Channel 2.5 V- 55 C+ 175 C83 WSMD/SMTPOWERPAK - SO - 8L - 5 Si1 Channel- 20 V , + 20 V108 nCEnhancement  
HSBA90P02


20V 90A 150W 2.5m@4.5V,20A 1V@250uA 1PCSPChannel PRPAK-8(5x6) MOSFETs ROHS
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HUASHUO 1636
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AUD 0.432
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LN7612HDT1WG


100V 55A 8.5mΩ@10V,1A 2W 4V@250uA N Channel DFN5060-8B MOSFETs ROHS
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Leshan 425
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AUD 0.6222
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