MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HSBA4206


40V 35A 21W 8.5m@10V,12A 2.5V@250uA 2 N-Channel PRPAK-8(5x6) MOSFETs ROHS
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HUASHUO 2890
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AUD 0.5452
Multiples of: 5

                   
P0R5B60HP2-5071


MOSFET Hi-PotMOS series Power MOSFET SMD
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Shindengen 2885
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AUD 0.4722
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            Hi - Potmos2      
FDMS8333LN


MOSFETs FET 40V 3.1 MOHM PQFN56
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ON Semiconductor 2885
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AUD 0.737
Multiples of: 1

76 A40 V3.1 mOhmsN - Channel 3 V- 55 C+ 150 C69 WSMD/SMTPOWER 56 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V46 nCEnhancement  
PJMD990N65EC_L2_00001


MOSFET 650V/ 990mohm Super Junction Easy version Gen.1.5
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Panjit 2885
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AUD 1.5173
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4.7 A650 V990 OhmsN - Channel 4 V- 55 C+ 150 C47.5 WSMD/SMT Reel , Cut TapeSi1 Channel- 30 V , + 30 V9.7 nCEnhancement  
WM02DN48A


Transistor: P-MOSFET x2; unipolar; SOP8
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Wayon 2883
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AUD 0.1379
Multiples of: 1

                   
WM02DP06D


Transistor: P-MOSFET x2; unipolar; SOT363
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Wayon 2882
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AUD 0.069
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NCE30D2519K


MOSFET N & P Trench 30V 25A (Tc),19A (Tc) 3V @ 250uA 12 mΩ @ 7A,10V TO-252-4 RoHS
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NCE Power 2853
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AUD 0.3744
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PJD40P03E-AU_L2_006A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 2853
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AUD 0.8176
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33 A30 V30.7 mOhmsP - Channel 2.5 V- 55 C+ 175 C33 WSMD/SMTTO - 252AA - 3Reel , Cut TapeSi1 Channel- 25 V , + 25 V22 nCEnhancementAEC - Q101 
NCE82H140D


82V 140A 4.3mO@10V,20A 220W N Channel TO-263 MOSFETs ROHS
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NCE Power 2620
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AUD 0.9607
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RT1A050ZPTR


ROHM Semiconductor MOSFET P Chan-12V-5A Mid-PowerSwitching
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ROHM 0
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AUD 0.3805
Multiples of: 1

5 A- 12 V26 mOhmsP - Channel10 V - 55 C+ 150 C1.25 WSmd/SmtTSST - 8ReelSi1 Channel10 V Enhancement  
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