MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI7252DP-T1-GE3


Mosfet Array 2 N-Channel (Dual) 100V 36.7A 46W Surface Mount PowerPAK® SO-8 Dual
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Vishay 2910
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AUD 2.5259
Multiples of: 3000

36.7 A100 V20 mOhmsn - channel20 V1.5 v to 3.5 V- 55 C+ 150 C46 Wsmd/smtSO - 8Reelsi2 channel20 V17.5 nCenhancement thunderfet trenchfet
MSJL120N60FH-TP


MOSFETs N-CHANNEL MOSFET,DFN8080A
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Micro Commercial Components (MCC) 2910
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AUD 3.0209
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30 A600 V120 mOhmsN - Channel 5 V- 55 C+ 150 C266 WSMD/SMTDFN - 8080A - 5Reel , Cut TapeSi1 Channel- 30 V , + 30 V57 nCEnhancement  
STB33N60M2


STMicroelectronics MOSFET
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STMicroelectronics 2910
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AUD 3.1959
Multiples of: 1000

26 A600 V125 mOhmsN - Channel+/- 25 V3 V- 55 C+ 150 C190 WSmd/SmtD2PAK - 3    45.5 nCEnhancement  
STL33N65M2


MOSFET N-channel 650 V, 0.124 Ohm typ., 20 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package
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STMicroelectronics 2910
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AUD 3.5224
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20 A650 V124 mOhmsn - channel 2 V- 55 C+ 150 C150 Wsmd/smtPowerflat - 8X8 - HV - 5Cut Tapesi1 channel20 V41.5 nCenhancement  
FDMS4D0N12C


MOSFET PTNG 120V N-FET 118A
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ON Semiconductor 2910
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AUD 3.722
Multiples of: 3000

114 A120 V4 mOhmsN - Channel 2 V- 55 C+ 150 C106 WSmd/SmtPQFN - 8Cut TapeSi1 Channel20 V82 nCEnhancement  
STL33N60DM2


MOSFET N-channel 600 V, 0.115 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package
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STMicroelectronics 2910
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AUD 3.8899
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21 A600 V115 mOhmsN - Channel 3 V- 55 C+ 150 C150 WSmd/SmtPowerflat - 8X8 - HV - 5Cut TapeSi1 Channel25 V43 nCEnhancement Mdmesh
STB23N80K5


MOSFET N-channel 800 V, 0.23 O typ., 16 A MDmesh K5 Power MOSFET in a D PAK package
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STMicroelectronics 2910
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AUD 4.056
Multiples of: 1000

16 A800 V280 mOhmsn - channel 4 V- 55 C+ 150 C190 Wsmd/smtTO - 252 - 3 si1 channel+/- 30 V33 nCenhancement  
STL23NM50N


STMicroelectronics MOSFET N-Ch 500V 0.170Ohm 14A pwr MOSFET
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STMicroelectronics 2910
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AUD 4.0616
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14 A550 V210 mOhmsN - Channel 3 V + 150 C3 WSmd/SmtPowerflat - 8ReelSi1 Channel25 V45 nC  Mdmesh
STB80N20M5


Transistor: N-MOSFET; unipolar; 200V; 38A; 190W; D2PAK
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STMicroelectronics 2910
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AUD 4.4496
Multiples of: 1000

            Supermesh      
IPL60R075CFD7AUMA1


MOSFET HIGH POWER_NEW
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Infineon 1730
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AUD 3.891
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