MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PJQ5540V-AU_R2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 1.4021
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174 A40 V2.1 mOhmsN - Channel 3.5 V- 55 C+ 175 C3.3 WSMD/SMTDFN - 5060X - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V63 nCEnhancementAEC - Q101 
IRL630PBF-BE3


N-Channel 200V 9A (Tc) 74W (Tc) Through Hole TO-220AB
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Vishay 2910
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AUD 1.7218
Multiples of: 1000

          TO - 220 - 3TubeMosfet (Metal Oxide)      
SI7141DP-T1-GE3


P-Channel 20 V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 2910
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AUD 1.7787
Multiples of: 3000

   P - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel       
FDMS1D2N03DSD


MOSFET PT11N 3012 & PT11
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ON Semiconductor 2910
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AUD 1.8552
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30 A30 V1.2 mOhms , 4 mOhmsN - Channel     Smd/SmtPowerclip56 - 8Cut TapeSi2 Channel16 V11 nC , 39 nCEnhancement  
SIR870DP-T1-GE3


MOSFET N-CHANNEL 100-V(D-S)
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Vishay 2910
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AUD 1.464
Multiples of: 3000

60 A100 V5 mOhmsN - Channel 1.2 V- 55 C+ 150 C104 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel20 V84 nCEnhancement Trenchfet, Powerpak
SIDR104ADP-T1-RE3


MOSFET N-CHANNEL 100 V
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Vishay 2910
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AUD 1.8802
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81 A100 V6.1 mOhmsN - Channel 4 V- 55 C+ 150 C100 WSMD/SMT Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V46.1 nCEnhancement  
SI7956DP-T1-GE3


Vishay Semiconductors MOSFET 150V 4.1A 3.5W 105mohm 10V
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Vishay 2910
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AUD 1.9362
Multiples of: 3000

2.6 A150 V105 mOhmsN - Channel20 V - 55 C+ 150 C1.4 WSmd/SmtSO - 8ReelSi     Trenchfet
AUIRLU3114Z


MOSFET N-CHANNEL 30 / 40
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Infineon 2910
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AUD 1.9521
Multiples of: 1

130 A40 V3.9 mOhmsn - channel 1 V- 55 C+ 175 C140 Wthrough holeTO - 251AA - 3Tubesi1 channel+/- 16 V56 nCenhancementaec - q101 
IPB030N08N3GATMA1


Transistor: N-MOSFET; unipolar; 80V; 160A; 214W; PG-TO263-7
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Infineon 2910
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AUD 2.0716
Multiples of: 1000

            Optimos 3      
AON6242


Transistor: N-MOSFET; unipolar; 60V; 66A; 83W; DFN8
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Alpha & Omega 2902
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AUD 1.6716
Multiples of: 1

                   
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