MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPB065N15N3 G


MOSFET N-Channel MOSFET 20-200V
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Infineon 2910
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AUD 4.5313
Multiples of: 1

130 A150 V6.5 mOhmsN - Channel20 V2 V- 55 C+ 175 C300 WSmd/SmtD2PAK - 6ReelSi1 Channel20 V93 nCEnhancement Optimos
STB42N60M2-EP


STMicroelectronics MOSFET
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STMicroelectronics 2910
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AUD 4.5522
Multiples of: 1000

34 A600 V87 mOhmsN - Channel 2 V- 55 C+ 150 C250 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel25 V55 nCEnhancement Mdmesh
STB30N65M5


MOSFET POWER MOSFET N-CH 650V
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STMicroelectronics 2910
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AUD 5.9241
Multiples of: 1000

22 A650 V125 mOhmsn - channel 4 V + 150 C140 Wsmd/smtD2PAK - 3Reel   64 nC   
STW23N85K5


MOSFET N-Ch 850V 0.2Ohm typ 19A Zener-protected
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STMicroelectronics 2910
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AUD 6.0784
Multiples of: 600

19 A850 V275 mOhmsn - channel30 V4 V- 55 C+ 150 C250 Wthrough holeTO - 247 - 3Tubesi1 channel30 V38 nC  mdmesh
FDMT800152DC


Fairchild Semiconductor MOSFET
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ON Semiconductor 2910
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AUD 6.25
Multiples of: 1

72 A100 V19 mOhmsN - Channel 2 V- 55 C+ 150 C113 WSmd/SmtPOWER88 - 8ReelSi1 Channel+/- 20 V59 nCEnhancement Dual Cool 88
STB43N65M5


MOSFET Automotive-grade N-channel 650 V, 0.058 Ohm typ., 42 A MDmesh M5 Power MOSFET in a D2PAK package
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STMicroelectronics 2910
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AUD 8.0299
Multiples of: 1000

42 A650 V63 mOhmsN - Channel 3 V- 55 C+ 150 C250 WSmd/SmtD2PAK - 3Reel-1 Channel+/- 25 V100 nCEnhancementAec - Q101Mdmesh
NVMTS0D7N06CTXG


MOSFET AFSM T6 60V SG NCH
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ON Semiconductor 2910
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AUD 8.7836
Multiples of: 1

464 A60 V720 uOhmsN - Channel 2 V- 55 C+ 175 C5 w , 294.6 WSmd/SmtDFN - 8Cut TapeSi1 Channel10 V72 nCEnhancementAec - Q101 
IPL65R130C7


Trans MOSFET N-CH 650V 15A 4-Pin VSON EP
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Infineon 2910
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AUD 9.0907
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                Enhancement  
TSG65N190CR RVG


MOSFETs 650V, 11A, PDFN56, E-mode GaN Transistor
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Taiwan Semiconductor 2903
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AUD 7.3881
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11 A650 V190 mOhmsN - Channel 2.6 V- 55 C+ 150 C SMD/SMTPDFN - 6Reel , Cut TapeSi1 Channel- 7 V , + 7 V2.2 nCEnhancement  
NTMTS002N10MCTXG


MOSFETs Single N-Channel Power MOSFET 100V, 194 A, 2 mohm, PQFN 8x8
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ON Semiconductor 2495
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AUD 5.1388
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236 A100 V5.3 mOhmsN - Channel 4 V- 55 C+ 175 C255 WSMD/SMTTDFNW - 8Reel , Cut Tape 1 Channel- 20 V , + 20 V89 nCEnhancement  
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