MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STP11NK40Z


Transistor: N-MOSFET; unipolar; 400V; 5.67A; 110W; TO220-3
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STMicroelectronics 2910
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AUD 1.4582
Multiples of: 1000

            Supermesh      
FQPF7N65C


MOSFET 650V N-Channel Adv Q-FET C-Series
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ON Semiconductor 2910
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AUD 1.4604
Multiples of: 1

   N - Channel  - 55 C+ 150 C Through HoleTO - 220FTube       
SIZF920DT-T1-GE3


MOSFET Dual 30V Vds PowerPAIR 6x5F
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Vishay 2910
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AUD 1.4642
Multiples of: 1

76 A , 197 A30 V3.07 mOhms , 1.05 mOhmsN - Channel 1.1 V- 55 C+ 150 C28 w , 74 WSmd/SmtPowerpair 6X5FCut TapeSi2 Channel- 16 v , 20 v , - 12 v , 16 v29 nC , 125 nCEnhancement Trenchfet; Powerpak
SI7820DN-T1-GE3


MOSFET 200V 2.6A 3.8W 240mohm @ 10V
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Vishay 2910
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AUD 1.5567
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8ReelSi     Trenchfet
SI7949DP-T1-GE3


Vishay Semiconductors MOSFET 60V 5.0A 3.5W 64mohm 10V
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Vishay 2910
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AUD 1.5763
Multiples of: 3000

3.2 A- 60 V64 mOhmsP - Channel  - 55 C+ 150 C1.5 WSmd/SmtSO - 8ReelSi 20 V   Trenchfet
FDMS86252L


MOSFET 150V N-Channel Shielded Gate PowerTrench MOSFET
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ON Semiconductor 2910
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AUD 1.5974
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4.4 A150 V46 mOhmsN - Channel20 V1.5 V- 55 C+ 150 C2.5 WSmd/SmtPOWER 56 - 8ReelSi1 Channel20 V   Powertrench
STL100N8F7


MOSFET N-channel 80 V, 5.2 mOhm typ., 100 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
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STMicroelectronics 2910
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AUD 1.6959
Multiples of: 3000

100 A80 V6.1 mOhmsn - channel 2.5 V- 55 C+ 175 C120 Wsmd/smtPowerflat - 8Reelsi1 channel+/- 20 V46.8 nCenhancement  
STB30NF20


MOSFET N Ch 1500V 2.5A Pwr MOSFET
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STMicroelectronics 2910
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AUD 1.6203
Multiples of: 1000

30 A200 V75 mOhmsN - Channel  - 55 C+ 150 C125 WSmd/SmtD2PAKReelSi1 Channel20 V Enhancement Stripfet
STB80NF10T4


MOSFET N-Ch 100 Volt 80 Amp
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STMicroelectronics 2910
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AUD 1.6634
Multiples of: 1000

80 A100 V15 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtD2PAKReelSi1 Channel10 V135 nCEnhancement Stripfet
NTMYS013N08LHTWG


MOSFETs T8 80V LL LFPAK
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ON Semiconductor 2861
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AUD 1.3594
Multiples of: 1

42 A80 V17 mOhmsN - Channel 2 V- 55 C+ 175 C53 WSMD/SMTLFPAK - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V17 nCEnhancement  
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