MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STU2N62K3


MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH
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STMicroelectronics 2910
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AUD 1.0562
Multiples of: 3000

2.2 A620 V3.6 Ohmsn - channel  - 55 C+ 150 C45 Wthrough holeIPAKTubesi1 channel30 V15 nC  mdmesh
RH6G040CHTB1


MOSFETs HSMT8 N-CH 40V 135A
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ROHM 2910
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AUD 1.1016
Multiples of: 1

135 A40 V2.5 mOhmsN - Channel 4 V- 55 C+ 175 C93 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V32 nCEnhancement  
PJD50N04V-AU_L2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 1.1016
Multiples of: 1

80 A40 V5.9 mOhmsN - Channel 3.5 V- 55 C+ 175 C68 WSMD/SMTTO - 252AA - 2Reel , Cut TapeSi1 Channel- 20 V , + 20 V23 nCEnhancementAEC - Q101 
PJD95P04E-AU_L2_006A1


MOSFETs 40V P-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 1.1049
Multiples of: 1

           Reel , Cut TapeSi    AEC - Q101 
SISS72DN-T1-GE3


MOSFET 150V Vds 20V Vgs PowerPAK 1212-8S
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Vishay 2910
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AUD 0.2903
Multiples of: 1

25.5 A150 V42 mOhmsN - Channel 2 V- 55 C+ 150 C65.8 WSmd/SmtPowerpak1212 - 8Cut TapeSi1 Channel20 V22 nCEnhancement Trenchfet, Thunderfet, Powerpak
SIJ478DP-T1-GE3


N-Channel 80 V 60A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 2910
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AUD 1.1213
Multiples of: 3000

60 A80 V8 mOhmsN - Channel 2.6 V- 55 C+ 150 C62.5 WSmd/SmtSO - 8ReelSi1 Channel20 V35.5 nCEnhancement Thunderfet Trenchfet
STD2NK90Z-1


MOSFET N-Ch, 900V-5ohms Zener SuperMESH 2.1A
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STMicroelectronics 2910
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AUD 1.1545
Multiples of: 3000

2.1 A900 V6.5 OhmsN - Channel30 V - 55 C+ 150 C70 WThrough HoleIPAK - 3TubeSi1 Channel30 V Enhancement Supermesh
SI7938DP-T1-GE3


MOSFET 40V 60A 46W 5.8mohm @ 10V
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Vishay 2910
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AUD 1.1746
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet
PJQ5839E-AU_R2_002A1


MOSFETs 30V Dual P-Channel Enhancement Mode MOSFET
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Panjit 2861
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AUD 0.9621
Multiples of: 1

31 A30 V30.7 mOhmsP - Channel 2.5 V- 55 C+ 175 C30 WSMD/SMTTO - 252AA - 3Reel , Cut TapeSi1 Channel- 25 V , + 25 V22 nCEnhancementAEC - Q101 
PJQ5544V-AU_R2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Panjit 2716
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AUD 0.9621
Multiples of: 1

120 A40 V3.6 mOhmsN - Channel 3.5 V- 55 C+ 175 C94 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V34 nCEnhancementAEC - Q101 
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