MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PJMD280N60E1_L2_00601


MOSFETs 600V/ 280mohms / 13.8A/ Easy to driver SJ MOSFET
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Panjit 2895
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AUD 0.8718
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13.8 A600 V280 mOhmsN - Channel 4 V- 55 C+ 150 C122.7 WThrough HoleTO - 252AA - 3Reel , Cut TapeSi1 Channel- 30 V , + 30 V27 nCEnhancement  
NTMYS010N04CLTWG


MOSFET T6 40V LL LFPAK
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ON Semiconductor 2895
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AUD 0.9276
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           Cut Tape       
STL120N4F6AG


STMicroelectronics MOSFET
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STMicroelectronics 2895
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AUD 1.1422
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55 A40 V2.9 mOhmsN - Channel 2 V- 55 C+ 175 C96 WSmd/SmtPowerflat - 8ReelSi1 Channel20 V63 nCEnhancementAec - Q101Stripfet
IRFBF30PBF-BE3


N-Channel 900V 3.6A (Tc) 125W (Tc) Through Hole TO-220AB
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Vishay 2893
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AUD 2.0444
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3.6 A900 V3.7 OhmsN - Channel 4 V- 55 C+ 150 C125 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V78 nCEnhancement  
IAUCN04S7L014ATMA1


MOSFETs N
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Infineon 2892
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AUD 0.8045
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179 A40 V1.43 mOhmsN - Channel 1.5 V- 55 C+ 175 C88 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 16 V , + 16 V36 nCEnhancement  
SIS406DN-T1-GE3


Vishay Semiconductors MOSFET 30V 14A 3.7W 11mohm 10V
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Vishay 2892
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AUD 1.0552
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9 A30 V11 mOhmsn - channel  - 55 C+ 150 C1.5 Wsmd/smtPOWERPAK - 1212 - 8Reelsi 25 V enhancement trenchfet, powerpak
GS-065-030-2-L-TR


MOSFET 650V, 30A, GaN E-mode, 8x8 PDFN, Bottom-side cooled
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Gan Systems 2885
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AUD 8.4552
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30 A650 V50 mOhms      SMD/SMTPDFN - 9Reel , Cut TapeGaN - on - Si1 Channel     
IRLML6302TRPBF


Transistor: P-MOSFET; unipolar; -20V; -0.78A; 0.54W; SOT23
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Infineon 2689
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AUD 0.9341
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   P - Channel     Smd/SmtSOT - 23Reel       
SI7121DN-T1-GE3


MOSFET 30V 16A 52W 1.8mohm @ 10V
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Vishay 2662
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AUD 0.3699
Multiples of: 5

   P - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel       
SIA400EDJ-T1-GE3


Vishay Semiconductors MOSFET 30V 12A 19.2W 19mOhms 4.5V
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Vishay 1439
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AUD 0.2858
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12 A30 V19 mOhmsN - Channel  - 55 C+ 150 C19.2 WSmd/SmtPOWERPAK - SC - 70 - 6ReelSi 12 V   Trenchfet, Powerpak
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