MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTMYS020N08LHTWG


MOSFETs T8 80V LL LFPAK
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ON Semiconductor 2910
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AUD 1.3069
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30 A80 V25 mOhmsN - Channel 2 V- 55 C+ 175 C42 WSMD/SMTLFPAK - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V12 nCEnhancement  
STP4N62K3


MOSFET N-Ch 620V 1.8 ohm 3.8 A SuperMESH3
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STMicroelectronics 2910
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AUD 1.3207
Multiples of: 1

3.8 A620 V1.95 OhmsN - Channel3 V4.5 V + 150 C70 WThrough HoleTO - 220 - 3Tube   14 nC   
SIR662DP-T1-GE3


MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET
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Vishay 2910
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AUD 1.1724
Multiples of: 3000

100 A60 V2.2 mOhmsN - Channel 1 V- 55 C+ 150 C104 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel20 V96 nCEnhancement Trenchfet, Powerpak
FDPF5N60NZ


MOSFET 600V, N-Channel MOSFET, UniFET-II
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ON Semiconductor 2910
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AUD 1.3517
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4.5 A600 V1.65 Ohmsn - channel 5 V + 150 C33 Wthrough holeTO - 220FTubesi1 channel25 V10 nC  unifet
STL66DN3LLH5


MOSFET Dual N-Ch 5.9mOhm 30V 20A STripFET V
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STMicroelectronics 2910
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AUD 1.3541
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20 A30 V5.9 mOhmsN - Channel     Smd/SmtPowerflat - 8ReelSi2 Channel     
PJD55P03E-AU_L2_006A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 1.384
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48 A30 V12.1 mOhmsP - Channel 2.5 V- 55 C+ 175 C3 WSMD/SMTTO - 252AA - 3Reel , Cut TapeSi1 Channel- 25 V , + 25 V34 nCEnhancementAEC - Q101 
IRFZ20PBF-BE3


N-Channel 50V 15A (Tc) 40W (Tc) Through Hole TO-220AB
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Vishay 2910
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AUD 1.3929
Multiples of: 1000

15 A50 V100 mOhmsN - Channel 4 V- 55 C+ 150 C40 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V12 nCEnhancement  
SIR158DP-T1-GE3


Vishay Semiconductors MOSFET 30V 60A 83W 1.8mohm 10V
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Vishay 2910
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AUD 1.4187
Multiples of: 3000

40 A30 V1.8 mOhmsN - Channel  - 55 C+ 150 C5.4 WSmd/SmtSO - 8ReelSi 20 V Enhancement Trenchfet, Powerpak
STL15N60M2-EP


STMicroelectronics MOSFET
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STMicroelectronics 2910
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AUD 1.4336
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7 A600 V418 mOhmsN - Channel 2 V- 55 C+ 150 C55 WSmd/SmtPowerflat - 5X6 - HV - 8Cut TapeSi1 Channel25 V17 nCEnhancement Mdmesh
NVMJS3D0N06CTWG


MOSFETs T6 60V SL LFPAK8 5X6
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ON Semiconductor 2643
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AUD 1.2412
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139.3 A60 V2.9 mOhmsN - Channel 4 V- 55 C+ 175 C112.5 WSMD/SMTLFPAK - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V34 nCEnhancement  
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