MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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First...701702703704705...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR3709ZTRRPBF


Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
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Infineon 2910
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AUD 0.8215
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            hexfet®      
HT8KE5HTB1


MOSFETs HSMTR 100V 6.5A N CHAN MOS
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ROHM 2910
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AUD 0.8307
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6.5 A100 V210 mOhmsN - Channel 4 V- 55 C+ 150 C13 WSMD/SMTH SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V3.7 nCEnhancement  
SI7108DN-T1-GE3


N-Channel 20 V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
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Vishay 2910
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AUD 0.8499
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel      Trenchfet/Powerpak
SI7623DN-T1-GE3


P-Channel 20 V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
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Vishay 2910
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AUD 0.8705
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35 A20 V3.1 mOhmsP - Channel 1.5 V- 55 C+ 150 C52 WSmd/SmtPOWERPAK 1212 - 8ReelSi1 Channel12 V180 nCEnhancement P - Channel Gen Iii
FDMC7664


MOSFET N-Chan 30/20V PowerTrench
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ON Semiconductor 2910
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AUD 0.8869
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18.8 A30 V4.5 mOhmsn - channel  - 55 C+ 150 C2.3 Wsmd/smtMLPReelsi1 channel20 V enhancement powertrench
RH7G04CBJFRATCB


MOSFETs Pch -40V -40A, DFN3333T8LSAB, Power MOSFET for Automotive
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ROHM 2910
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AUD 0.8931
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40 A40 V17.7 mOhmsP - Channel 2.5 V- 55 C+ 175 C62 WSMD/SMTDFN - 8Reel , Cut TapeSi1 Channel- 20 V , + 5 V33 nCEnhancement  
SQJ402EP-T1_GE3


MOSFET 100V 32A 27watt AEC-Q101 Qualified
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Vishay 2910
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AUD 0.9035
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32 A100 V11 mOhmsN - Channel 1.5 V- 55 C+ 175 C83 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel10 V34 nCEnhancementAec - Q101Trenchfet
SI7463ADP-T1-GE3


Vishay Semiconductors MOSFET -40V -46A 39W
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Vishay 2910
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AUD 0.9062
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46 A40 V10 mOhmsP - Channel 1.2 V- 55 C+ 150 C39 WSmd/SmtPOWERPAK - SO - 8ReelSi1 Channel10 V96 nCEnhancement Trenchfet
FDMS8333LN


MOSFETs FET 40V 3.1 MOHM PQFN56
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ON Semiconductor 2881
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AUD 0.7519
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76 A40 V3.1 mOhmsN - Channel 3 V- 55 C+ 150 C69 WSMD/SMTPOWER 56 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V46 nCEnhancement  
PJQ5948V-AU_R2_002A1


MOSFETs 40V Dual N-Channel Enhancement Mode MOSFET
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Panjit 2797
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AUD 0.7224
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35 A40 V13.4 mOhmsN - Channel 3.5 V- 55 C+ 175 C32 WSMD/SMTDFN - 5060B - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V9.5 nCEnhancementAEC - Q101 
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