MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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First...701702703704705...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RQ3L120BKFRATCB


MOSFETs Nch 60V 12A, HSMT8AG, Power MOSFET for Automotive
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ROHM 2997
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AUD 0.8094
Multiples of: 1

12 A60 V30 mOhmsN - Channel 2.5 V- 55 C+ 150 C40 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V7.3 nCEnhancement  
STL6P3LLH6


STMicroelectronics MOSFET
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STMicroelectronics 2910
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AUD 0.7142
Multiples of: 3000

6 A30 V30 mOhmsP - Channel20 V1 V- 55 C+ 150 C2.9 WSmd/SmtPowerflat - 8Cut TapeSi1 Channel20 V12 nCEnhancement Stripfet
SI6562CDQ-T1-GE3


MOSFET 20V 6.7/6.1A 22/30mohm @ 4.5V
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Vishay 2910
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AUD 0.7183
Multiples of: 3000

6.7 A , 6.1 A20 V22 mOhms , 30 mOhmsN And P - Channel 600 mV- 55 C+ 150 C1.6 w , 1.7 WSmd/SmtTSSOP - 8ReelSi2 Channel4.5 v , - 4.5 V15 nC , 34 nCEnhancement Trenchfet
SI7465DP-T1-E3


P-Channel 60 V 3.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® SO-8
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Vishay 2910
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AUD 0.7188
Multiples of: 3000

5 A60 V64 mOhmsP - Channel 1 V- 55 C+ 150 C3.5 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel- 10 V26 nCEnhancement Trenchfet/Powerpak
QS8J13TR


ROHM Semiconductor MOSFET
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ROHM 2910
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AUD 0.7332
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5.5 A12 V15 mOhmsP - Channel 1 V + 150 C1.5 WSmd/SmtT SMT - 8ReelSi2 Channel8 V60 nCEnhancement  
SI6954ADQ-T1-GE3


Vishay Semiconductors MOSFET Dual N-Ch MOSFET 30V 53mohm 10V
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Vishay 2910
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AUD 0.744
Multiples of: 3000

3.1 A30 V53 mOhmsN - Channel 1 V- 55 C+ 150 C830 mWSmd/SmtTSSOP - 8ReelSi 20 V8 nCEnhancement Trenchfet
SQS482EN-T1-GE3


Trans MOSFET N-CH 30V 16A
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Vishay 2910
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AUD 0.7737
Multiples of: 3000

                   
SIS468DN-T1-GE3


MOSFET 80V 19.5mOhm@10V 30A N-Ch MV T-FET
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Vishay 2910
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AUD 0.7295
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30 A80 V19.5 mOhmsn - channel 1.5 V- 55 C+ 150 C52 Wsmd/smtPOWERPAK 1212 - 8Reelsi1 channel20 V28 nCenhancement trenchfet, powerpak
ATP102-TL-H


MOSFET SWITCHING DEVICE
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ON Semiconductor 2910
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AUD 0.7698
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- 40 A- 30 V18.5 mOhmsP - Channel20 V - 55 C+ 150 C40 WSmd/SmtDPAK - 3Reel   34 nC   
STL40DN3LLH5


MOSFET Dual N-Ch 30V 11A 0.016 Ohm STripFET V
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STMicroelectronics 2910
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AUD 0.7743
Multiples of: 3000

40 A30 V16 mOhmsN - Channel 1.5 V  60 WSmd/SmtPowerflat 5X6ReelSi2 Channel22 V4.5 nC Aec - Q101Stripfet
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