MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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First...701702703704705...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFH5250TRPBF


Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
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Infineon 2910
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AUD 0.6748
Multiples of: 1

100 A25 V1.15 mOhmsN - Channel    3.6 WSmd/SmtPQFN - 8ReelSi1 Channel20 V52 nC   
NVMFS5C423NLET1G


MOSFETs T6-40V N 2 MOHMS LL
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ON Semiconductor 2910
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AUD 0.6764
Multiples of: 1

150 A40 V2 mOhmsN - Channel 2 V- 55 C+ 175 C83 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel20 V50 nCEnhancement  
IRLR2905ZTRLPBF


Trans MOSFET N-CH 55V 60A 3-Pin(2+Tab) DPAK T/R
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Infineon 2910
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AUD 0.6808
Multiples of: 1

60 A55 V13.5 mOhmsN - Channel 3 V + 175 C110 WSmd/SmtDPAKReelSi1 Channel 35 nC   
SIZ200DT-T1-GE3


MOSFET 30V Vds 20/-16V Vgs PowerPAIR 3x3S
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Vishay 2910
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AUD 0.689
Multiples of: 3000

61 A , 60 A30 V5.5 mOhms , 5.8 mOhmsN - Channel 1.1 V- 55 C+ 150 C33 WSmd/SmtPowerpair - 3X3S - 8Cut TapeSi2 Channel20 v , - 16 V28 nC , 30 nCEnhancement Trenchfet
RF4E070BNTR


ROHM Semiconductor MOSFET 4.5V Drive Nch MOSFET
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ROHM 2910
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AUD 0.6895
Multiples of: 1

7 A30 V28.6 mOhmsN - Channel 2 V- 55 C+ 150 C2 WSmd/SmtDFN2020 - 8ReelSi1 Channel20 V8.9 nC   
IRF630


Transistor: N-MOSFET; unipolar; 200V; 5.7A; 75W; TO220-3
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STMicroelectronics 2910
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AUD 0.709
Multiples of: 1

            Supermesh      
RQ3G120BJFRATCB


MOSFETs Pch -40V -12A, HSMT8AG, Power MOSFET for Automotive
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ROHM 2902
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AUD 0.6567
Multiples of: 1

12 A40 V48 mOhmsP - Channel 2.5 V- 55 C+ 150 C40 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 5 V15.5 nCEnhancement  
TPCA8131,LQ(S


30V 27W 1 Piece P-Channel SOP-8-Advance(5x6) MOSFETs ROHS
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Toshiba 2897
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AUD 0.8463
Multiples of: 1

                   
RF9G120BJFRATCR


MOSFETs Pch -40V -12A, DFN2020Y7LSAA, Power MOSFET for Automotive
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ROHM 2890
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AUD 0.6682
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12 A40 V48 mOhmsP - Channel 2.5 V- 55 C+ 150 C23 WSMD/SMTDFN - 6Reel , Cut TapeSi1 Channel- 20 V , + 5 V15.5 nCEnhancement  
RQ3L120BJFRATCB


MOSFETs Pch -60V -12A, HSMT8AG, Power MOSFET for Automotive
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ROHM 2711
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AUD 0.6518
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12 A60 V106 mOhmsP - Channel 2.5 V- 55 C+ 150 C40 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 5 V15.7 nCEnhancement  
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First...701702703704705...

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