MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO4441


MOSFET P Trench 60V 4A 3V @ 250uA 100 mΩ @ 4A,10V SOIC-8_150mil RoHS
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Alpha & Omega 2947
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AUD 0.3861
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4 A  P    3.1 WSurface Mount      Enhancement  
RQ5E065AJTCL


MOSFET NCH 30V 6.5A POWER
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ROHM 2900
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AUD 0.3907
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6.5 A30 V18.1 mOhmsN - Channel 500 mV- 55 C+ 150 C1 WSmd/SmtSOT - 346T - 3Cut TapeSi1 Channel12 V12.2 nCEnhancement  
SI3590DV-T1-GE3


MOSFET 30V 3.0/2.0A 1.15W 77/170mohm @ 4.5V
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Vishay 2900
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AUD 0.636
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   N And P - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6ReelSi     Trenchfet
DMN16M9UCA6-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 2900
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AUD 0.6407
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   N - Channel, Npn 500 mV- 55 C+ 150 C2.4 W  Cut TapeSi2 Channel4.5 V35.2 nCEnhancementAec - Q101 
BSZ900N15NS3 G


Infineon Technologies MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3
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Infineon 2900
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AUD 0.7963
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13 A150 V90 mOhmsN - Channel 2 V- 55 C+ 150 C38 WSmd/SmtTDSON - 8ReelSi1 Channel20 V7 nCEnhancement Optimos
PJD25N04V-AU_L2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 2900
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AUD 1.0015
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42 A40 V11.3 mOhmsN - Channel 3.5 V- 55 C+ 175 C36 WSMD/SMTTO - 252AA - 2Reel , Cut TapeSi1 Channel- 20 V , + 20 V9.5 nCEnhancementAEC - Q101 
SSM6J511NU,LF


MOSFET Small-signal MOSFET Power MGMT switch
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Toshiba 2895
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AUD 0.3065
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14 A12 V6.5 mOhmsP - Channel 1 V + 150 C1.25 WSmd/SmtUDFN6B - 6Cut TapeSi1 Channel10 V47 nCEnhancement  
SQS462EN-T1_BE3


MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET
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Vishay 2635
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AUD 0.6091
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           Reel , Cut TapeSi      
PJD35P03_L2_00001


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 2427
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AUD 0.4081
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2SK3756(TE12L.F)


SC-62 MOSFETs ROHS
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Toshiba 2122
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AUD 0.624
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