MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RQ3G270BJFRATCB


MOSFETs Pch -40V -27A, HSMT8AG, Power MOSFET for Automotive
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ROHM 3715
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AUD 0.8143
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27 A40 V22 mOhmsP - Channel 2.5 V- 55 C+ 150 C69 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 5 V32 nCEnhancement  
SI8413DB-T1-E1


MOSFET 20V 6.5A 2.77W 48mohm @ 4.5V
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Vishay 2900
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AUD 1.0697
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   P - Channel  - 55 C+ 150 C Smd/SmtMICRO - FOOT - 4ReelSi     Trenchfet
STU2N95K5


STMicroelectronics MOSFET N-Ch 950V 4.2Ohm typ 2A Zener-protected
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STMicroelectronics 2900
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AUD 1.1381
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2 A950 V5 Ohmsn - channel 4 V- 55 C+ 150 C45 Wthrough holeIPAK - 3Tubesi1 channel30 V10 nC  supermesh
R6015KNJTL


MOSFET Nch 600V 15A Si MOSFET
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ROHM 2900
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AUD 2.5192
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15 A600 V260 mOhmsN - Channel 3 V- 55 C+ 150 C184 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V27.5 nCEnhancement  
DMN2026UVT-7


MOSFET N-Ch Enh Mode FET 20Vdss 10Vgss 20A
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Diodes Incorporated 2899
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AUD 0.2271
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   N - Channel     Smd/SmtTSOT - 26 - 6ReelSi1 Channel     
RQ5A025ZPTL


MOSFET PCH -12V -2.5A SMALL SIGNAL
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ROHM 2899
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AUD 0.3725
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2.5 A12 V61 mOhmsP - Channel 300 mV- 55 C+ 150 C1 WSmd/SmtSOT - 346T - 3Cut TapeSi1 Channel10 V13 nCEnhancement  
RQ3E110AJTB


N-Channel 30 V 11A (Ta), 24A (Tc) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
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ROHM 2899
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AUD 0.461
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24 A30 V11.7 mOhmsN - Channel 500 mV- 55 C+ 150 C15 WSmd/SmtH SMT - 8Cut TapeSi1 Channel12 V13.5 nCEnhancement  
P16B6SB-5071


Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W
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Shindengen 2899
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AUD 0.7418
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            EETMOS3      
PJD40P03E-AU_L2_006A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 2899
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AUD 0.7519
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33 A30 V30.7 mOhmsP - Channel 2.5 V- 55 C+ 175 C33 WSMD/SMTTO - 252AA - 3Reel , Cut TapeSi1 Channel- 25 V , + 25 V22 nCEnhancementAEC - Q101 
PJQ5540-AU_R2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 2787
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AUD 1.4021
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192 A40 V1.88 mOhmsN - Channel 2.3 V- 55 C+ 175 C125 WSMD/SMTDFN - 5060X - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V75 nCEnhancementAEC - Q101 
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