MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIHH190N65E-T1-GE3


MOSFETs N-CHANNEL 650V
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Vishay 2861
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AUD 4.4164
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17 A650 V190 mOhmsN - Channel 5 V- 55 C+ 150 C130 WSMD/SMTPOWERPAK 8 x 8Reel , Cut TapeSi1 Channel- 30 V , + 30 V33 nCEnhancement Vishay
AON6234


Trans MOSFET N-CH 40V 85A 8-Pin DFN EP T/R
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Alpha & Omega 2860
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AUD 0.9006
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IPT60T022S7XTMA1


MOSFETs Y
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Infineon 2860
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AUD 10.5075
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           Reel , Cut TapeSi     CoolMOS
PSMN028-100HSX


MOSFETs PSMN028-100HS/SOT1205/LFPAK56D
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Nexperia 2859
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AUD 0.903
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29 A100 V27.5 mOhmsN - Channel 4 V- 55 C+ 175 C64 WSMD/SMTLFPAK - 56D - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V34 nCEnhancement  
FDMS8095AC


MOSFET PT5 150V Dual N & P-Channel Power
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ON Semiconductor 2859
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AUD 2.0373
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27 A , - 2.2 A150 v , - 150 V58 mOhms , 2.171 OhmsN - Channel, P - Channel 2 v , - 2 V- 55 C+ 150 C50 w , 12.5 WSmd/SmtPOWER56 - 8ReelSi2 Channel+/- 20 v , +/- 25 V21 nC , 2.8 nCEnhancement Powertrench
RSU002P03T106


MOSFET P-CH 30V 200MA SOT-323
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ROHM 2858
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AUD 0.3334
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200 mA30 V1.6 OhmsP - Channel 2.5 V + 150 C200 mWSmd/SmtUMT - 3ReelSi1 Channel20 V Enhancement  
SI1425DH-T1-GE3


MOSFETs P-CHANNEL 20-V (D-S) MOSFET
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Vishay 2857
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AUD 0.1149
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STU4N80K5


STMicroelectronics MOSFET N-Ch 800V 2.1Ohm typ 3A Zener-protected
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STMicroelectronics 2857
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AUD 1.1673
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3 A800 V2.5 Ohmsn - channel 3 V- 55 C+ 150 C60 Wthrough holeIPAK - 3Tubesi1 channel30 V10.5 nCenhancement mdmesh
TPNTJD4152PT1G


SOT-363 MOSFETs ROHS
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TECH PUBLIC 2856
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AUD 0.1014
Multiples of: 5

                   
SQJA82EP-T1_GE3


MOSFET N-Channel 80V PowerPAK SO-8L
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Vishay 2850
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AUD 0.8735
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60 A80 V6.8 mOhmsN - Channel 1.5 V- 55 C+ 175 C68 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V60 nCEnhancementAec - Q101Trenchfet
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