MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WPM2015-MS


20V 3A 80mΩ@4.5V,2.8A 400mW 1V@250uA 55pF@10V P Channel 405pF@10V 5.5nC@4.5V +150℃@(Tj) SOT-23-3 MOSFETs ROHS
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MSKSEMI 2890
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AUD 0.0879
Multiples of: 10

                   
TPM4105EC6-1


SOT-363 MOSFETs ROHS
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TECH PUBLIC 2890
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AUD 0.1251
Multiples of: 5

                   
HSBB3016


MOSFET N Channel 30V 30A 2.5V @ 250uA 4mO @ 20A,10V PRPAK3x3 RoHS
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HUASHUO 2890
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AUD 0.136
Multiples of: 5

                   
DMS2120LFWB-7


Diodes Incorporated MOSFET 20V 2.9A P-CHANNEL
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Diodes Incorporated 2890
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AUD 0.1755
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2.9 A- 20 V95 mOhmsP - Channel12 V - 55 C+ 150 C1.5 WSmd/SmtDFN - 8ReelSi1 Channel12 V Enhancement  
RHK003N06T146


N-Channel 60 V 300mA (Ta) 200mW (Ta) Surface Mount SMT3
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ROHM 2890
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AUD 0.2138
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300 mA60 V1.1 OhmsN - Channel  - 55 C+ 150 C200 mWSmd/SmtSMT - 3ReelSi1 Channel20 V Enhancement  
QS5U34TR


MOSFET N Chan20V1.5A Load Switching
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ROHM 2890
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AUD 0.2479
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1.5 A20 V130 mOhmsN - Channel  - 55 C+ 150 C700 mWSmd/SmtT SMT 6ReelSi1 Channel10 V1.8 nCEnhancement  
DMN3115UDMQ-7


SOT-26-6 MOSFETs ROHS
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Diodes Incorporated 2890
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AUD 0.3317
Multiples of: 5

                   
PJQ5528_R2_00201


MOSFETs 30V N-Channel (LL) SGT MOSFET
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Panjit 2890
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AUD 0.3349
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58 A30 V6 mOhmsN - Channel 2.5 V- 55 C+ 150 C30 WSMD/SMTDFN - 5060X - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V11 nCEnhancement  
DMP2039UFDE4-7


Diodes Incorporated MOSFET MOSFET BVDSS: 25V-30 X2-DFN2020-6 T&R 3K
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Diodes Incorporated 2890
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AUD 0.3628
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7.3 A25 V70 mOhmsP - Channel 1 V- 55 C+ 150 C690 mWSmd/SmtX2 - DFN2020 - 6ReelSi1 Channel8 V28.2 nCEnhancement  
HSSX2901


20V 800mA 500mΩ@4.5V,0.65A 300mW 1V@250uA 1PCSN-Channel&1PCSP-Channel SOT-563 MOSFETs ROHS
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HUASHUO 2691
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AUD 0.087
Multiples of: 5

                   
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