MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTJS3157NT1G


MOSFET 20V 4A N-Channel
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ON Semiconductor 2910
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AUD 0.1829
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtSC - 88Reel       
ZXMN3A01E6TA


Diodes Incorporated MOSFET 30V N-Chnl UMOS
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Diodes Incorporated 2910
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AUD 0.1832
Multiples of: 3000

3 A30 V180 mOhmsN - Channel20 V - 55 C+ 150 C1.1 WSmd/SmtSOT - 23 - 6ReelSi1 Channel20 V Enhancement  
DMN1019UVT-7


Diodes Incorporated MOSFET 12V Enh Mode FET
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Diodes Incorporated 2910
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AUD 0.1841
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11 A12 V7 mOhmsN - Channel 350 mV- 55 C+ 150 C2.17 WSmd/SmtTSOT - 26 - 6ReelSi1 Channel8 V50.6 nCEnhancement  
SSM3J328R,LF(B


Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F
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Toshiba 2910
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AUD 0.1867
Multiples of: 1

                   
TPM1019ND6-1


DFN2X2-6L MOSFETs ROHS
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TECH PUBLIC 2910
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AUD 0.1899
Multiples of: 5

                   
TPM1019ND6-2


DFN2X2-6L MOSFETs ROHS
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TECH PUBLIC 2910
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AUD 0.1899
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HSBB02P15


150V 2A 640mΩ@10V,1A 7.7W 3V@250uA 23pF@75V P Channel 400pF@75V 4.5nC@10V -55℃~+150℃@(Tj) PRPAK3x3 MOSFETs ROHS
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HUASHUO 2910
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AUD 0.1901
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SQ2398ES-T1_GE3


MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
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Vishay 2910
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AUD 0.1923
Multiples of: 3000

1.6 A100 V300 mOhmsN - Channel 2.5 V- 55 C+ 175 C2 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V2.3 nCEnhancementAec - Q101Trenchfet
HSL10P06


60V 10A 70mΩ@10V,5A 1.5W P Channel SOT-223 MOSFETs ROHS
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HUASHUO 2910
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AUD 0.1929
Multiples of: 5

                   
AO4800


30V 6.2A 22mΩ 1.78W 2 N-Channel SOP-8 MOSFETs ROHS
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JSMSEMI 2910
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AUD 0.1965
Multiples of: 5

                   
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