MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN1016UCB6-7


N-Channel 12 V 5.5A (Ta) 920mW (Ta) Surface Mount U-WLB1510-6
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Diodes Incorporated 2890
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AUD 0.4207
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   N - Channel     Smd/SmtU - WLB1510 - 6ReelSi1 Channel     
PJQ5524-AU_R2_002A1


MOSFETs 30V N-Channel (LL) SGT MOSFET
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Panjit 2890
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AUD 0.6731
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93 A30 V3.6 mOhmsN - Channel 2.5 V- 55 C+ 175 C50 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V21 nCEnhancementAEC - Q101 
PJD30N15S-AU_L2_006A1


MOSFETs 150V N-Channel Enhancement Mode MOSFET
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Panjit 2890
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AUD 0.9161
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26 A150 V49 mOhmsN - Channel 4 V- 55 C+ 175 C83 WSMD/SMTTO - 252AA - 2Reel , Cut TapeSi1 Channel- 20 V , + 20 V22 nCEnhancementAEC - Q101 
RH6E040BGTB1


MOSFETs Nch 30V 125A, HSMT8, Power MOSFET
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ROHM 2890
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AUD 1.146
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125 A30 V2.9 mOhmsN - Channel 2.5 V- 55 C+ 150 C78 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V30 nCEnhancement  
R6015KNXC7G


MOSFET 600V POWER MOSFET
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ROHM 2890
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AUD 3.4615
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15 A600 V290 mOhmsN - Channel 5 V- 55 C+ 150 C60 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V , - 30 V , + 30 V27.5 nCEnhancement  
SIHH085N60EF-T1GE3


MOSFETs N-CHANNEL 600V
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Vishay 2890
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AUD 5.8448
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30 A600 V850 mOhmsN - Channel 5 V- 55 C+ 150 C184 WSMD/SMTPOWERPAK - 5 Si1 Channel- 30 V , + 30 V42 nCEnhancement  
SQJA82EP-T1_BE3


MOSFETs N-CHANNEL 80-V (D-S) 175C MOSFET
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Vishay 2878
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AUD 0.7306
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           Reel , Cut TapeSi      
NVMYS4D5N04CTWG


MOSFETs Power MOSFET 40 V, 4.5m?, 80 A, Single N-Channel
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ON Semiconductor 2850
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AUD 0.6764
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80 A40 V4.5 mOhmsN - Channel 3.5 V- 55 C+ 175 C55 WSMD/SMTLFPAK - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V18 nCEnhancement  
NTTFSS002N04HL


MOSFETs Power MOSFET, Single, N-Channel, 40V/2.1mohm, WDFN9 3x3, Source Down Power MOSFET, Single, N-Channel, 40V/2.1m ohms, 3x3 Source Down
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ON Semiconductor 2711
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AUD 1.2478
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150 A40 V3.1 mOhmsN - Channel 2 V- 55 C+ 150 C84 WSMD/SMTWDFN - 9Reel , Cut TapeSi1 Channel- 20 V , + 20 V20.3 nCEnhancement  
QH8JE5TCR


MOSFETs 100V Dual Pch+Pch, TSMT8, Power MOSFET
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ROHM 2650
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AUD 0.5057
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2 A100 V270 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.5 WSMD/SMTT SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V19.7 nCEnhancement  
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