MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLTS2242TRPBF


Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
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Infineon 2910
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AUD 0.1966
Multiples of: 3000

6.9 A20 V55 mOhmsP - Channel  - 55 C+ 150 C2 WSmd/SmtTSOP - 6ReelSi1 Channel     
WM10P20M2


Transistor: P-MOSFET; unipolar; SOT23
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Wayon 2910
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AUD 0.1978
Multiples of: 1

                   
FDS9431A


SOP-8 MOSFETs ROHS
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TECH PUBLIC 2910
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AUD 0.1995
Multiples of: 5

                   
SI1926DL-T1-GE3


MOSFET Dual N-CH 60-V(D-S)
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Vishay 2910
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AUD 0.1997
Multiples of: 3000

370 mA60 V1.4 OhmsN - Channel20 V - 55 C+ 150 C510 mWSmd/SmtSC - 70 - 6Cut TapeSi     Trenchfet
DMP2305UVT-7


Diodes Incorporated MOSFET 20V P-CH MOSFET
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Diodes Incorporated 2910
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AUD 0.1999
Multiples of: 1

4.23 A20 V45 mOhmsP - Channel 900 mV- 55 C+ 150 C1.25 WSmd/SmtTSOT - 26 - 6ReelSi1 Channel8 V7.6 nCEnhancement  
DMN2100UDM-7


20V 3.3A 55mO@4.5V,6A 1W N Channel SOT-26 MOSFETs ROHS
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Diodes Incorporated 2910
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AUD 0.2018
Multiples of: 3000

3.3 A20 V55 mOhmsN - Channel  - 55 C+ 150 C900 mWSmd/SmtSOT - 26 - 6ReelSi1 Channel8 V Enhancement  
HSBA3202


30V 35A 15mΩ@10V,10A 42W 2.3V@250uA 2 N-Channel PRPAK5x6 MOSFETs ROHS
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HUASHUO 2910
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AUD 0.2023
Multiples of: 5

                   
DMN1053UCP4-7


MOSFET MOSFETBVDSS: 8V-24V
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Diodes Incorporated 2910
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AUD 0.2043
Multiples of: 1

4 A12 V38 mOhmsN - Channel 350 mV- 55 C+ 150 C1.34 WSmd/SmtX3 - DSN0808 - 4Cut TapeSi1 Channel8 V15 nCEnhancement  
WNM2020A-3/TR


SOT-23 MOSFETs ROHS
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Will Semiconductor 2910
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AUD 0.2087
Multiples of: 5

                   
RTR040N03TL


MOSFET 2.5V Drive N-Chan
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ROHM 0
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AUD 0.109
Multiples of: 3000

   N Channel      T SMT - 3Reel       
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