MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVJD4158CT1G


270mW SC-88-6 MOSFETs ROHS
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ON Semiconductor 3271
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AUD 0.2036
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250 mA , 880 mA20 V , 30 V215 mOhms , 1 OhmsN - Channel, P - Channel 610 mV , 1.2 V- 55 C+ 150 C270 mWSMD/SMTSC - 88 - 6Reel , Cut TapeSi2 Channel- 20 V , + 12 V900 pC , 2.2 nCEnhancement  
IXTA05N100HV


MOSFET High Voltage Power MOSFET
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IXYS 3271
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AUD 3.8254
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750 mA1 kV17 OhmsN - Channel 2.5 V- 55 C+ 150 C40 WSmd/SmtTO - 263 - 3TubeSi1 Channel30 V7.8 nCEnhancement  
TSM1NB60CP ROG


MOSFET 600V 1A Single N-Cha nnel Power MOSFET
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Taiwan Semiconductor 3270
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AUD 0.371
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1 A600 V8 OhmsN - Channel 2.5 V- 55 C+ 150 C39 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V6.1 nCEnhancement  
AO3404A-JSM


SOT-23-3L MOSFETs ROHS
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JSMSEMI 3268
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AUD 0.0393
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SP4953DP8


SOP-8L MOSFETs ROHS
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Siliup 3268
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AUD 0.0637
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BSH205G2R


Transistor: P-MOSFET; unipolar; -20V; -1.2A; 890mW; SOT23
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Nexperia 3268
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AUD 0.302
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YJG95G06B


PDFN(5x6) MOSFETs ROHS
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Yangjie 3268
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AUD 0.9186
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SQJ504EP-T1_GE3


MOSFET 40/-40V Vds; SO-8L +/-20V Vgs
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Vishay 3268
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AUD 1.6851
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30 A40 V7.5 mOhms , 17 mOhmsN - Channel, P - Channel 1.5 v , 2.5 V- 55 C+ 175 C34 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi2 Channel20 V30 nC , 85 nCEnhancement  
IXFH400N075T2


MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 400A
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IXYS 3265
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AUD 14.9567
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400 A75 V2.3 mOhmsn - channel 4 V- 55 C+ 175 C1 kWthrough holeTO - 247 - 3Tubesi 20 V420 nCenhancement hiperfet
DMN2009USS-13


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 3265
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AUD 0.3694
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12.1 A20 V12 mOhmsN - Channel 500 mV- 55 C+ 150 C2 WSmd/SmtSO - 8Cut TapeSi1 Channel12 V34 nCEnhancement  
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