MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD060N03LG


TO-252 MOSFETs ROHS
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Youtai 3254
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AUD 0.1868
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PMDXB950UPEZ


NXP Semiconductors MOSFET 20 V, dual P-channel Trench MOSFET
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Nexperia 3254
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AUD 0.2789
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- 500 mA , - 500 mA- 20 v , - 20 V5 Ohms , 5 OhmsP - Channel - 450 mV , - 450 mV- 55 C+ 150 C380 mWSmd/SmtDFN1010B - 6ReelSi2 Channel+/- 8 v , +/- 8 V1.19 nCEnhancement  
2SK3565(STA4,Q,M)


MOSFET N Trench 900V 5A 4V @ 1mA 2.5 Ω @ 3A,10V SC-67 RoHS
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Toshiba 3254
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AUD 0.9899
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5 A900 V2 OhmsN - Channel  - 55 C+ 150 C45 WSmd/SmtSC - 62 - 3Tube 1 Channel30 V    
IRF840SPBF


N-Channel 500 V 8A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)
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Vishay 3254
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AUD 1.3709
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8 A500 V850 mOhmsN - Channel 2 V- 55 C+ 150 C125 WSmd/SmtTO - 263 - 3TubeSi1 Channel10 V63 nCEnhancement  
IRF1407PBF


Transistor: N-MOSFET; unipolar; 75V; 130A; 330W; TO220AB
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Infineon 3253
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AUD 0.8293
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            Hexfet®      
IAUS300N08S5N012TATMA1


MOSFET MOSFET_(75V 120V(
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Infineon 3252
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AUD 4.4657
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300 A80 V1.2 mOhmsN - Channel 3.8 V- 55 C+ 175 C375 WSMD/SMTHSOG - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V178 nCEnhancement  
IRF5803TRPBF


MOSFET P Trench 40V 3.4A 3V @ 250uA 112 mΩ @ 3.4A,10V TSOP-6 RoHS
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Infineon 3249
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AUD 0.1834
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            Hexfet®      
SPP15P10PHXKSA1


MOSFET SMALL SIGNAL+P-CH
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Infineon 3249
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AUD 1.0039
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   p - channel     through holeTO - 220 - 3Tubesi1 channel     
RQ3G100GNTB


ROHM Semiconductor MOSFET
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ROHM 3248
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AUD 0.3021
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10 A40 V11 mOhmsN - Channel 1.2 V- 55 C+ 150 C2 WSmd/SmtH SMT - 8ReelSi1 Channel20 V8.4 nCEnhancement  
BSS138


MOSFET N Trench 50V 300mA 1.5V @ 250uA 2.5 Ω @ 500mA,10V SOT-23 RoHS
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Youtai 3201
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AUD 0.0099
Multiples of: 50

                   
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