MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
KIA3401


MOSFET P Trench 30V 4A 1.3V @ 250uA 60 mΩ @ 4A,10V SOT-23 (SOT-23-3) RoHS
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KIA 3479
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AUD 0.0525
Multiples of: 10

                   
DMP2003UPS-13


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 3478
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AUD 0.8451
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150 A20 V1.7 mOhmsP - Channel 500 mV- 55 C+ 150 C80 WSmd/SmtPowerdi5060 - 8 Si1 Channel10 V177 nCEnhancement  
BSZ130N03MSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8
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Infineon 3477
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AUD 0.3633
Multiples of: 1

            Optimos 3      
IPTC011N08NM5ATMA1


MOSFETs N
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Infineon 3477
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AUD 6.6698
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408 A80 V1.1 mOhmsN - Channel 3.8 V- 55 C+ 175 C3.8 WSMD/SMTHDSOP - 16Reel , Cut TapeSi1 Channel- 20 V , + 20 V223 nCEnhancement  
TSM4NB60CP ROG


MOSFET 600V, 4A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 3476
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AUD 1.8
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4 A600 V2.2 OhmsN - Channel 3.5 V- 55 C+ 150 C50 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V14.5 nCEnhancement  
BSC360N15NS3GATMA1


MOSFET MV POWER MOS
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Infineon 3475
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AUD 1.3034
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   N Channel       Reel       
AO3419


20V 5A 43mO@4.5V,5A P Channel SOT-23-3 MOSFETs ROHS
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VBsemi Elec 3474
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AUD 0.0673
Multiples of: 5

                   
WSF07N10


100V 7A 195mO@10V,1A 1.25W N Channel TO-252-2 MOSFETs ROHS
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Winsok 3470
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AUD 0.183
Multiples of: 1

                   
DMN3032LE-13


Diodes Incorporated MOSFET FET BVDSS 25V 30V N-Ch 498pF 4.1nC
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Diodes Incorporated 3385
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AUD 0.1202
Multiples of: 5

5.6 A30 V29 mOhmsN - Channel 2 V- 55 C+ 150 C1.8 WSmd/SmtSOT223Reel-1 Channel+/- 20 V11.3 nCEnhancement  
IRFL4310TRPBF


MOSFET N Trench 100V 1.6A 4V @ 250uA 200 mΩ @ 1.6A,10V SOT-223 RoHS
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Infineon 3159
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AUD 0.33
Multiples of: 1

1.6 A100 V200 mOhmsN - Channel    2.1 WSmd/SmtSOT - 223ReelSi1 Channel20 V17 nC   
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