MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RV2C010UNT2L


ROHM Semiconductor MOSFET
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ROHM 7968
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AUD 0.1114
Multiples of: 5

1 A20 V470 mOhmsN - Channel 300 mV- 55 C+ 150 C400 mWSmd/SmtDFN - 1006 - 3ReelSi1 Channel4.5 V Enhancement  
KIA50N06BD


MOSFET N Trench 60V 50A 4V @ 250uA 12.5 mΩ @ 30A,10V TO-252-2 (DPAK) RoHS
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KIA 3365
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AUD 0.2293
Multiples of: 5

                   
FDD86381_F085


MOSFET 80/20V 1000A N-chnl PowerTrench MOSFET
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ON Semiconductor 3142
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AUD 0.4066
Multiples of: 1

25 A80 V45 mOhmsN - Channel 2 V- 55 C+ 175 C48.4 WSmd/SmtTO - 263 - 3ReelSi1 Channel+/- 20 V14 nCEnhancement  
FDD8870(UMW)


TO-252 MOSFETs ROHS
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Youtai 3133
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AUD 0.2122
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IPN50R1K4CEATMA1


MOSFET CONSUMER
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Infineon 3118
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AUD 0.2331
Multiples of: 1

3.1 A500 V3.28 OhmsN - Channel 2.5 V- 40 C+ 150 C5 WSmd/SmtSOT - 223 - 3ReelSi1 Channel+/- 20 V8.2 nCEnhancement Coolmos
S60N03D


30V 62A 5mΩ 2.5V N Channel PDFN(3x3) MOSFETs ROHS
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HL 3108
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AUD 0.0893
Multiples of: 5

                   
HSBA0139


MOSFET P Channel 100V 30A 2.5V @ 250uA 50mΩ @ 10A,10V PRPAK5x6 RoHS
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HUASHUO 2998
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AUD 0.5924
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RD3H160SPTL1


MOSFET Pch -45V -16A TO-252(DPAK)
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ROHM 2797
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AUD 1.0885
Multiples of: 1

16 A45 V35 mOhmsP - Channel 3 V- 55 C+ 150 C20 WSmd/SmtDPAK - 3Cut TapeSi1 Channel- 10 V16 nCEnhancement  
RV3C002UNT2CL


MOSFET 20V Vdss 2ohm Rds on Id +/-150mA N-Ch
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ROHM 2651
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AUD 0.1806
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150 mA20 V5.4 OhmsN - Channel 300 mV- 55 C+ 150 C100 mWSmd/SmtVML0604 - 3ReelSi1 Channel+/- 10 V Enhancement  
30P03


30V 25A 25m 2.5V 1PCSPChannel TO-252 MOSFETs ROHS
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HL 688
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AUD 0.083
Multiples of: 5

                   
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