MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIRA80DP-T1-RE3


MOSFET 30V Vds 20-16V Vgs PowerPAK SO-8
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Vishay 3233
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AUD 2.0051
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100 A30 V470 uOhmsN - Channel 2.2 V- 55 C+ 150 C104 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 v , - 16 V125 nC  Trenchfet, Powerpak
RQ6C065BCTCR


MOSFET Pch -20V -6.5A Si MOSFET
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ROHM 3232
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AUD 0.4187
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6.5 A20 V14.9 mOhmsP - Channel 1.2 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 457 - 6Cut TapeSi1 Channel8 V22 nCEnhancement  
IPDD60R090CFD7XTMA1


N-Channel 600V 33A (Tc) 227W (Tc) Surface Mount PG-HDSOP-10-1
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Infineon 3232
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AUD 3.0701
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33 A600 V90 mOhmsN - Channel 4.5 V- 55 C+ 150 C227 WSMD/SMTHDSOP - 10Reel , Cut TapeSi1 Channel- 20 V , + 20 V42 nCEnhancement  
CSD25402Q3A


mosfet p trench 20v 76a 1.15v @ 250ua 8.9 m @ 10a,4.5v vsonp-8 rohs
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Texas Instruments 3230
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AUD 0.4552
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DN1509K1-G


Transistor: N-MOSFET; unipolar; 90V; 0.3A; 490mW; SOT23-3
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Microchip 3229
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AUD 0.8964
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RRL035P03FRATR


MOSFET Pch -30V Vds -3.5A 0.058Rds(on) 8Qg
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ROHM 3224
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AUD 0.2331
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3.5 A30 V36 mOhmsP - Channel 1 V + 150 C1 WSmd/SmtTUMT - 6Cut TapeSi1 Channel- 10 V14 nCEnhancementAec - Q101 
STU10N60M2


STMicroelectronics MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2
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STMicroelectronics 3222
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AUD 1.1148
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7.5 A600 V560 mOhmsn - channel 3 V- 55 C+ 150 C85 Wthrough holeIPAK - 3Tubesi1 channel25 V13.5 nC  mdmesh
DMC1229UFDB-7


Diodes Incorporated MOSFET Comp ENH Mode FET 12V Vdss 8V VGss
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Diodes Incorporated 3221
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AUD 0.2561
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- 3.8 A , 5.6 A- 12 v , 12 V29 mOhms , 61 mOhmsN - Channel, P - Channel - 1 v , 1 V- 55 C+ 150 C1.4 WSmd/SmtU - DFN2020 - 6 TYPE BReel-2 Channel+/- 8 V10.5 nC , 10.7 nCEnhancement  
SPD15P10PGBTMA1


MOSFET P-Ch -100V 15A DPAK-2
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Infineon 3221
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AUD 1.0113
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15 A100 V160 mOhmsP - Channel 4 V- 55 C+ 175 C128 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V48 nCEnhancement  
SI3415-TP


MOSFET N-Channel Enhancement Mode Field Effect Transistor
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Micro Commercial Components (MCC) 3220
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AUD 0.276
Multiples of: 5

4 A20 V50 mOhmsP - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel8 V17.2 nCEnhancement  
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