MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQ4425EY-T1_BE3


MOSFET P-CHANNEL 30 V
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Vishay 3467
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between Wed. 03 Dec to Fri. 05 Dec
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AUD 1.5808

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18 A30 V9 mOhmsP - Channel 2.5 V- 55 C+ 175 C6.8 WSMD/SMTSO - 8Trenchfet , Cut Tape , ReelSi1 Channel- 20 V , + 20 V50 nCEnhancement TrenchFET
TK20V60W5,LVQ


N-Channel 600 V 20A (Ta) 156W (Tc) Surface Mount 4-DFN-EP (8x8)
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Toshiba 3466
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between Wed. 03 Dec to Fri. 05 Dec
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AUD 3.1016

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20 A600 V156 mOhmsN - Channel 3 V- 55 C+ 150 C156 WSmd/SmtDFN - 5ReelSi1 Channel30 V55 nCEnhancement  
HXY4402S


20V 20A 5.5mΩ@4.5V,20A N Channel SOP-8 MOSFETs ROHS
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HXY MOS 3465
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between Thu. 11 Dec to Tue. 16 Dec
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AUD 0.0866

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DMN2009USS-13


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 3463
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between Wed. 03 Dec to Fri. 05 Dec
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AUD 0.3929

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12.1 A20 V12 mOhmsN - Channel 500 mV- 55 C+ 150 C2 WSmd/SmtSO - 8Cut TapeSi1 Channel12 V34 nCEnhancement  
IRFR5505TRPBF-VB


60V 25A 46mΩ@10V P Channel TO-252 MOSFETs ROHS
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VBsemi Elec 3463
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between Thu. 11 Dec to Tue. 16 Dec
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AUD 0.649

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SI4850DY-T1-E3-VB


60V 7.6A null SO-8 MOSFETs ROHS
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VBsemi Elec 3462
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between Thu. 11 Dec to Tue. 16 Dec
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AUD 0.3656

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FDD3672


Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; TO252AA
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ON Semiconductor 3312
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between Wed. 03 Dec to Fri. 05 Dec
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AUD 1.3619

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            Ultrafet®      
Hot IRF9310TRPBF


MOSFET P Trench 30V 20A (Tc) 2.4V @ 100uA 4.6 mΩ @ 20A,10V SOIC-8_150mil RoHS
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Infineon 3292
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between Thu. 11 Dec to Tue. 16 Dec
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AUD 0.6735

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20 A30 V6.8 mOhmsP - Channel    2.5 WSmd/SmtSOIC - 8ReelSi 20 V58 nC   
DMP6023LFGQ-13


Trans MOSFET P-CH 60V 7.7A 8-Pin PowerDI 3333 T/R
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Diodes Incorporated 2711
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between Wed. 03 Dec to Fri. 05 Dec
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AUD 0.4924

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         Smd/SmtPowerdi3333 - 8Cut TapeSi    Aec - Q101 
FDMS86202


Power-56-8 MOSFETs ROHS
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ON Semiconductor 2498
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between Wed. 03 Dec to Fri. 05 Dec
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AUD 3.4222

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40 A120 V10.9 mOhmsN - Channel20 V3.1 V- 55 C+ 150 C156 WSmd/SmtPOWER - 56 - 8ReelSi1 Channel20 V45 nC  Powertrench Power Clip
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