MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2SK2158


MOSFET N Trench 50V 200mA 1.5V @ 1mA 3.5 Ω @ 200mA,5V SOT-23 (SOT-23-3) RoHS
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Shikues 3220
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AUD 0.029
Multiples of: 20

                   
NX138AKMYL


MOSFET MOSFET DISCRETES
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Nexperia 3220
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AUD 0.0627
Multiples of: 10

270 mA60 V4.2 OhmsN - Channel 1.5 V- 55 C+ 150 C648 mWSMD/SMTDFN1006 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V400 pCEnhancement  
YJG20N06A


Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 12.5A; 41W
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Yangjie 3220
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AUD 0.1834
Multiples of: 5

            Trench Power Mv      
IRFB4115PBF


Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
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Infineon 3220
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AUD 0.789
Multiples of: 1

   N - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
IRFS3607TRLPBF


MOSFET N Trench 75V 80A 4V @ 100uA 9 mΩ @ 46A,10V TO-263-2 RoHS
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Infineon 3220
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AUD 0.7961
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80 A75 V7.34 mOhmsN - Channel    140 WSmd/SmtD2PAKReelSi1 Channel20 V56 nC   
FDV304P-NL-VB


20V 5A 35mΩ@10V P Channel SOT-23 MOSFETs ROHS
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VBsemi Elec 3219
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AUD 0.0656
Multiples of: 5

                   
SWHA065R03VLT


30V 58A 6.4mΩ DFN(5x6) MOSFETs ROHS
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Sam&wing 3216
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AUD 0.1171
Multiples of: 5

                   
NCE60H10K


60V 100A 4.8mΩ@10V,20A 170W N Channel TO-252 MOSFETs ROHS
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NCE Power 3214
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AUD 0.3881
Multiples of: 1

                   
SI8424CDB-T1-E1


MOSFET 8V 10A 2.7W 20mOhms @ 4.5V
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Vishay 3213
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AUD 0.2758
Multiples of: 1

   N - Channel     Smd/SmtMICRO - FOOT - 4Reel      Microfoot Trenchfet
SH8MA4TB1


MOSFET 30V NCH+PCH POWER
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ROHM 3212
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AUD 0.6699
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9 A , 8.5 A30 V21 mOhms , 29.6 mOhmsN - Channel, P - Channel 1 V- 55 C+ 150 C3 WSmd/SmtSOP - 8Cut TapeSi2 Channel20 V15.5 nC , 19.6 nCEnhancement  
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