MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
MOT4170J


40V 45A 28W 6m@10V,20A 2.5V@250uA 1PCSNChannel PDFN3x3 MOSFETs ROHS
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MOT 3210
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AUD 0.1372
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DMP31D0UFB4-7B


Diodes Incorporated MOSFET MOSFET BVDSS: 25V-30 X2-DFN1006-3 T&R 10K
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Diodes Incorporated 3210
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AUD 0.1441
Multiples of: 5

760 mA30 V2 OhmsP - Channel 1.1 V- 55 C+ 150 C460 mWSmd/SmtX2 - DFN1006 - 3ReelSi1 Channel8 V1.5 nCEnhancement  
NSS085N100P5


100V 9.5m@10V,20A 1.7V@250uA 1PCSNChannel PDFN5x6 MOSFETs ROHS
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NH 3209
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AUD 0.3655
Multiples of: 1

                   
PSMN4R3-80PS,127


MOSFET N-Ch 80V 4.3 mOhms
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Nexperia 3209
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AUD 5.7369
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120 A80 V4.3 mOhmsn - channel 3 V- 55 C+ 175 C306 Wthrough holeTO - 220 - 3Tubesi1 channel20 V104 nC   
BSC105N15LS5ATMA1


MOSFETs N
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Infineon 3208
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AUD 1.6418
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76 A150 V14 mOhmsN - Channel 1.8 V- 55 C+ 150 C125 WSMD/SMTSUPERSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V34 nCEnhancement  
SI2301-TP


mosfet p trench 20v 2.8a 450mv @ 250ua (min) 120 m @ 2.8a,4.5v sot-23 (sot-23-3) rohs
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Micro Commercial Components (MCC) 3206
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AUD 0.1067
Multiples of: 1

                   
DMP2110U-7


MOSFET MOSFET BVDSS: 8V~24V SOT23 T&R 3K
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Diodes Incorporated 3205
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AUD 0.1067
Multiples of: 1

3.5 A20 V80 mOhmsP - Channel 1 V- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V6 nCEnhancement  
DMN3009LFVW-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 3202
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AUD 0.3563
Multiples of: 1

60 A30 V3.5 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtPowerdi3333 - 8 Si1 Channel10 V42 nCEnhancement  
IXTQ36P15P


MOSFET -36.0 Amps -150V 0.110 Rds
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IXYS 3202
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AUD 6.1896
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36 A150 V110 mOhmsP - Channel  - 55 C+ 150 C300 WThrough HoleTO - 3P - 3TubeSi1 Channel20 V Enhancement  
HSST3134


20V 900mA 250mW 400mΩ@4.5V,800mA 1V@250uA N Channel SOT-523 MOSFETs ROHS
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HUASHUO 2774
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AUD 0.0369
Multiples of: 10

                   
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