MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot RD3P050SNTL1


MOSFET Nch 100V 5A TO-252(DPAK)
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ROHM 3528
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between Thu. 11 Dec to Tue. 16 Dec
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AUD 0.4069

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5 A100 V135 mOhmsN - Channel 2.5 V- 55 C+ 150 C15 WSmd/SmtDPAK - 3Cut TapeSi1 Channel10 V14 nCEnhancement  
WPM2341-3/TR


MOSFET P Trench 20V 3.5A 1V @ 250uA 61 mΩ @ 3.3A,4.5V SOT-23 (SOT-23-3) RoHS
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Will Semiconductor 3443
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between Thu. 11 Dec to Tue. 16 Dec
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AUD 0.0791

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SI1902CDL-T1-GE3


MOSFET 20V Vds 12V Vgs SC70-6
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Vishay 3443
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between Thu. 11 Dec to Tue. 16 Dec
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AUD 0.1571

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1.1 A20 V235 mOhmsN - Channel 600 mV- 55 C+ 150 C420 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel4.5 V2 nCEnhancement Trenchfet
FDB0630N1507L


MOSFET 150V 7L JEDEC GREEN EMC
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ON Semiconductor 3439
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between Wed. 03 Dec to Fri. 05 Dec
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AUD 5.9016

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130 A150 V26 mOhmsN - Channel 2 V- 55 C+ 150 C300 WSmd/SmtTO - 263 - 7ReelSi1 Channel+/- 20 V97 nCEnhancement Powertrench
G1003A


MOSFET SOT-23-3L RoHS
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GOFORD 3438
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AUD 0.1073

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           Tape Reel (Tr)       
UT6K3TCR


MOSFET 30V Nch+Nch Si MOSFET
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ROHM 3435
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between Wed. 03 Dec to Fri. 05 Dec
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AUD 0.4243

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5.5 A30 V30 mOhms , 30 mOhmsN - Channel 500 mV- 55 C+ 150 C2 WSmd/SmtHuml2020l - 8Cut TapeSi2 Channel12 V4 nC , 4 nCEnhancement  
RQ6C065BCTCR


MOSFET Pch -20V -6.5A Si MOSFET
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ROHM 3435
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AUD 0.458

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6.5 A20 V14.9 mOhmsP - Channel 1.2 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 457 - 6Cut TapeSi1 Channel8 V22 nCEnhancement  
FDN358P(UMW)


SOT-23 MOSFETs ROHS
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Youtai 3433
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AUD 0.0377

Multiples of: 10

                   
8205A


TSSOP-8 MOSFETs ROHS
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TECH PUBLIC 3433
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AUD 0.054

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DMP3020LSS-13


Diodes Incorporated MOSFET P-Channel 2.5W
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Diodes Incorporated 3404
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between Thu. 11 Dec to Tue. 16 Dec
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AUD 0.2811

Multiples of: 5

12 A- 30 V14 mOhmsP - Channel25 V - 55 C+ 150 C2.5 WSmd/SmtSOP - 8Reel    Enhancement  
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