MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCE40P13S


MOSFET P Trench 40V 13A 2.5V @ 250uA 15 mΩ @ 12A,10V SOP-8 RoHS
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NCE Power 3288
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AUD 0.242
Multiples of: 5

                   
BSP320S H6327


Infineon Technologies MOSFET N-Ch 60V 2.9A SOT-223-3
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Infineon 3287
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AUD 0.4563
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2.9 A60 V120 mOhmsN - Channel 2.1 V- 55 C+ 150 C1.8 WSmd/SmtSOT - 223 - 4ReelSi1 Channel20 V9.7 nCEnhancement  
TSM4NB60CI C0G


MOSFET 600V, 4A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 3287
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AUD 2.1154
Multiples of: 1

4 A600 V2.2 OhmsN - Channel 2.5 V- 55 C+ 150 C25 WThrough HoleI TO - 220 - 3Cut TapeSi1 Channel10 V14.5 nCEnhancement  
BSS87 H6327


Infineon Technologies MOSFET N-Ch 240V 260mA SOT-89-3
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Infineon 3281
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AUD 0.2249
Multiples of: 1

260 mA240 V6 OhmsN - Channel 800 mV- 55 C+ 150 C1 WSmd/SmtP - SOT - 89 - 3Reel-1 Channel10 V3.7 nCEnhancement  
CSD16413Q5A


N-Channel 25 V 24A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6)
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Texas Instruments 3281
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AUD 0.8307
Multiples of: 1

100 A25 V4.1 mOhmsN - channel 1.6 V- 55 C+ 150 C3.1 WSmd/smtQFN - 8ReelSi1 Channel16 V9 nCEnhancement Nexfet
IPD082N10N3G(UMW)


TO-252 MOSFETs ROHS
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Youtai 3280
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AUD 0.6611
Multiples of: 1

                   
IRFH5006TRPBF


Transistor: N-MOSFET; unipolar; 60V; 21A; 250W; PQFN5X6
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Infineon 3280
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AUD 4.1522
Multiples of: 1

100 A60 V4.1 mOhmsN - Channel 2 V- 55 C+ 150 C156 WSmd/SmtPQFN - 8 (5X6 mm)ReelSi1 Channel20 V69 nC   
WST2305A


SOT-23N MOSFETs ROHS
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Winsok 3279
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AUD 0.0328
Multiples of: 20

                   
SSM3J334R,LF(T


MOSFET P Trench 30V 4A 2V @ 100uA 71 mΩ @ 3A,10V SOT-23F RoHS
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Toshiba 3259
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AUD 0.0715
Multiples of: 10

                   
HSBA3052


MOSFET N Channel 30V 52A 2.5V @ 250uA 6.3mO @ 20A,10V DFN5x6 RoHS
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HUASHUO 2129
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AUD 0.1999
Multiples of: 5

                   
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