MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF7404TRPBF


MOSFET P Trench 20V 6.7A 700mV @ 250uA 40 mΩ @ 3.2A,4.5V SOIC-8_150mil RoHS
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Infineon 5828
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AUD 1.3601
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6.7 A20 V40 mOhmsP - Channel 700 mV- 55 C+ 150 C2.5 WSmd/SmtSOIC - 8ReelSi1 Channel12 V50 nC   
WM03DN85A


Transistor: N-MOSFET x2; unipolar; SOP8
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Wayon 3181
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AUD 0.1525
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IQDH35N03LM5CGSCATMA1


MOSFETs TRENCH <= 40V
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Infineon 3181
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AUD 2.7746
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700 A30 V350 uOhmsN - Channel 2.8 V- 55 C+ 150 C278 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V91 nCEnhancement OptiMOS
IPW60R080P7XKSA1


MOSFET HIGH POWER_NEW
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Infineon 3181
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AUD 4.5478
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37 A600 V69 mOhmsN - Channel 3 V- 55 C+ 150 C129 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V51 nCEnhancement Coolmos
RTM002P02T2L


MOSFET P-CH 20V 200MA
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ROHM 3176
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AUD 0.0719
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200 mA20 V2 OhmsP - Channel    150 mWSmd/SmtVMT - 3ReelSi1 Channel12 V Enhancement  
LND150K1-G


MOSFET N Trench 500V 13mA (Tj) 1000 Ω @ 500uA,0V SOT-23 (SOT-23-3) RoHS
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Microchip 3173
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AUD 0.766
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13 mA500 V1 kOhmsN - Channel  - 55 C+ 150 C360 mWSmd/SmtSOT - 23ReelSi1 Channel20 V Depletion  
SL4822A


SOP-8 MOSFETs ROHS
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SLKORMICRO 3171
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AUD 0.1142
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MS3134


SOT-723 MOSFETs ROHS
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MSKSEMI 3152
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AUD 0.0552
Multiples of: 10

                   
WM06P17M


null 1.7A 180m@10V,1.5A 1W 1V@250uA SOT-23 MOSFETs ROHS
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Wayon 2890
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AUD 0.0651
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FDMS8D8N15C


MOSFET FET ENGR DEV-NOT REL
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ON Semiconductor 0
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AUD 1.614
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85 A150 V8.8 mOhmsN - Channel 2.5 V- 55 C+ 150 C132 WSmd/SmtPQFN - 8Cut TapeSi1 Channel20 V50 nCEnhancement  
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