MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD60R400CEAUMA1


650V 14.7A 400mO@10V,3.8A 112W N Channel TO-252 MOSFETs ROHS
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Infineon 3565
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AUD 0.749
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 600 V       Smd/SmtTO - 252 - 3Cut TapeSi     Coolmos
TSM055N03EPQ56 RLG


MOSFET 30V N 80Amp 5,5mohm channel Mosfet
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Taiwan Semiconductor 3559
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AUD 0.0184
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80 A30 V4.5 mOhmsN - Channel 1.2 V- 55 C+ 150 C74 WSmd/SmtPDFN56 - 8Cut TapeSi1 Channel10 V11.1 nCEnhancement  
IQD020N10NM5SCATMA1


MOSFETs TRENCH >=100V
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Infineon 3556
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AUD 4.2952
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276 A100 V2.05 mOhmsN - Channel 3.8 V- 55 C+ 175 C333 WSMD/SMTPG - WHSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V107 nCEnhancement OptiMOS
IRF7389TRPBF


Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
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Infineon 3555
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AUD 0.5779
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7.3 A30 V46 mOhmsN - Channel, P - Channel20 V   2.5 WSmd/SmtSOIC - 8ReelSi2 Channel20 V22 nC   
SI3456DDV-T1-E3


Vishay Semiconductors MOSFET 30V 6.3A 2.7W 40mohm 10V
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Vishay 3553
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AUD 0.1571
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5 A30 V40 mOhmsN - Channel20 V - 55 C+ 150 C1.7 WSmd/SmtTSOP - 6ReelSi   Enhancement Trenchfet
TPN5900CNH,L1Q


MOSFET UMOSVIII 150V 59mOhm VGS=10V TSON-ADV
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Toshiba 3549
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AUD 0.7907
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18 A150 V50 mOhmsN - Channel 4 V- 55 C+ 150 C39 WSmd/SmtTSON - ADVANCE - 8Cut TapeSi1 Channel20 V7 nCEnhancement U - Mosviii - H
RSU002P03T106


MOSFET P-CH 30V 200MA SOT-323
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ROHM 3548
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AUD 0.213
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200 mA30 V1.6 OhmsP - Channel 2.5 V + 150 C200 mWSmd/SmtUMT - 3ReelSi1 Channel20 V Enhancement  
LGE2312


Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
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Luguang 3545
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AUD 0.1044
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HSCB2016


20V 16A 9mΩ@4.5V,16A 18W N Channel DFN-6L(2x2) MOSFETs ROHS
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HUASHUO 3545
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AUD 0.1196
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IRF3710ZPBF


Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; TO220AB
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Infineon 3530
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AUD 0.9795
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