MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SL3400


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 41 mΩ @ 5.8A,10V SOT-23 RoHS
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SLKORMICRO 3298
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AUD 0.0373
Multiples of: 20

                   
AP3407


MOSFET P Trench 30V 4.1A 3V @ 250uA 60 mΩ @ 4.1A,10V SOT23 RoHS
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Quan Li 3298
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AUD 0.05
Multiples of: 20

                   
TQM076NH04LDCR RLG


MOSFETs 40V, 40A, Dual N-Channel Power MOSFET
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Taiwan Semiconductor 3298
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AUD 1.2048
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40 A40 V7.6 mOhmsN - Channel 2.2 V- 55 C+ 175 C46.8 WSMD/SMTPDFN56U - 8Reel , Cut TapeSi2 Channel- 16 V , + 16 V10.7 nCEnhancementAEC - Q101PerFET
SIR638DP-T1-GE3


MOSFET 40V Vds 20V Vgs PowerPAK SO-8
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Vishay 3298
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AUD 1.5856
Multiples of: 1

           Cut TapeSi     Trenchfet, Powerpak
CS9N90ANHD


900V 9A 150W 0.95Ω@10V,4.5A 4V@250uA 13pF@25V N Channel 3850pF@25V 65nC@10V -55℃~+150℃@(Tj) TO-3P MOSFETs ROHS
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CRMICRO 3297
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AUD 0.9932
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TPN11003NL,LQ


MOSFET N-Ch DTMOS VII-H 19W 510pF 31A 30V
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Toshiba 3295
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AUD 0.4384
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31 A30 V12.6 mOhmsN - Channel20 V2.3 V- 55 C+ 150 C19 WSmd/SmtTSON - 8ReelSi1 Channel20 V7.5 nCEnhancement  
NTHD4102PT1G


ON Semiconductor MOSFET -20V -4.1A Dual P-Channel
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ON Semiconductor 3295
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AUD 0.6107
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- 4.1 A- 20 V120 mOhmsP - Channel8 V - 55 C+ 150 C600 mWSmd/SmtCHIP - FET - 8ReelSi2 Channel8 V Enhancement  
S4866D


40V 33A 13mΩ 2.4V 2 N-Channel PDFN-8(3x3) MOSFETs ROHS
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HL 3293
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AUD 0.1076
Multiples of: 5

                   
AO4612


MOSFET N/P-CH 60V 8-SOIC
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Alpha & Omega 3290
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AUD 0.6955
Multiples of: 1

           -       
IRF730APBF


MOSFET N-Chan 400V 5.5 Amp
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Vishay 3290
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AUD 1.2691
Multiples of: 1

5.5 A400 V1 OhmsN - Channel 2 V- 55 C+ 150 C74 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V22 nCEnhancement  
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