MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD50N06S4L12ATMA2


Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W
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Infineon 3531
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AUD 0.5867
Multiples of: 1

            Optimos T2      
AO3401A


30V 4.2A 65mΩ@10V,4.2A 350mW 30V@250uA P Channel SOT-23 MOSFETs ROHS
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FUXINSEMI 3530
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AUD 0.0313
Multiples of: 20

                   
FCP260N60E


MOSFET PWM Controller mWSaver
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ON Semiconductor 3529
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AUD 2.6103
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15 A650 V260 mOhmsN - Channel 3.5 V- 55 C+ 150 C156 WThrough HoleTO - 220TubeSi1 Channel20 V48 nC  Superfet Ii
DMG9926UDM-7


Mosfet Array 2 N-Channel (Dual) Common Drain 20V 4.2A 980mW Surface Mount SOT-26
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Diodes Incorporated 3528
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AUD 0.2881
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   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 26Reel       
DMN3007LSSQ-13


MOSFET MOSFETBVDSS: 25V-30V
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Diodes Incorporated 3528
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AUD 0.4435
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16 A30 V5 mOhmsN - Channel 1.3 V- 55 C+ 150 C2.5 WSmd/SmtSO - 8Cut TapeSi1 Channel20 V64.2 nCEnhancementAec - Q101 
BSC076N06NS3 G


MOSFET OptiMOS2 PWR Transistor N-CH
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Infineon 3527
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AUD 0.7997
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50 A60 V6.2 mOhmsN - Channel 2 V- 55 C+ 150 C69 WSmd/SmtTDSON - 8ReelSi1 Channel20 V50 nCEnhancement Optimos
AON7401-HXY


30V 50A 3W 13mΩ@10V P Channel DFN-8L(5x6) MOSFETs ROHS
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HXY MOS 3525
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AUD 0.1693
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CSD25211W1015


Texas Instruments MOSFET PCh NexFET Power MOSFET
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Texas Instruments 3524
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AUD 0.2671
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- 3.2 A- 20 V33 mOhmsP - Channel - 800 mV- 55 C+ 150 C1 WSmd/SmtDSBGA - 6ReelSi1 Channel- 6 V3.4 nC  Nexfet
Hot IRFP260MPBF


MOSFET N Trench 200V 50A 4V @ 250uA 40 mΩ @ 28A,10V TO-247 (AC) RoHS
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Infineon 3411
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AUD 0.9621
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   N - Channel  - 55 C+ 175 C Through HoleTO - 247AC - 3Tube       
DMG3406L-7


MOSFET 30V N-Ch Enh Mode 50mOhm 10V 3.6A
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Diodes Incorporated 3259
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AUD 0.0932
Multiples of: 10

3.6 A30 V50 mOhmsN - Channel 1 V- 55 C+ 150 C770 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V11.2 nCEnhancement  
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