MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSZ097N10NS5ATMA1


Infineon Technologies MOSFET N-Ch 100V 40A TSDSON-8
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Infineon 3305
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AUD 0.949
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40 A100 V13 mOhmsN - Channel 2.2 V- 55 C+ 150 C69 WSmd/SmtTSDSON - 8ReelSi1 Channel+/- 20 V22 nCEnhancement Optimos
RQ5L020SNTL


MOSFET NCH 60V 2A SMALL SIGNAL
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ROHM 3303
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AUD 0.2709
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2 A60 V170 mOhmsN - Channel 1 V- 55 C+ 150 C1 WSmd/SmtSOT - 346T - 3Cut TapeSi1 Channel20 V2.7 nCEnhancement  
NX3008PBKS.115


Transistor: P-MOSFET; unipolar; -30V; -200mA; 80mW; SOT363
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Nexperia 3303
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AUD 0.2758
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BSC018NE2LSIATMA1


Transistor: N-MOSFET; unipolar; 25V; 29A; 69W; PG-TDSON-8
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Infineon 3303
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AUD 0.8201
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            Optimos      
AP3020


MOSFET 2 N Channel (Dual) 30V 11.8A 3V @ 250uA 11.5 mΩ @ 11A,10V SO-8 RoHS
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Quan Li 3302
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AUD 0.2881
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BSZ034N04LS


Infineon Technologies MOSFET
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Infineon 3302
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AUD 0.5878
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40 A40 V2.7 mOhmsN - Channel 1.2 V- 55 C+ 150 C52 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V35 nCEnhancement Optimos
DMN4034SSS-13


N-Channel 40 V 5.4A (Ta) 1.56W (Ta) Surface Mount 8-SO
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Diodes Incorporated 3301
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AUD 0.3875
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5.4 A40 V34 mOhmsN - Channel  - 55 C+ 150 C1.56 WSmd/SmtSOIC - 8ReelSi1 Channel20 V4.9 nC   
DMT4004LPS-13


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 3301
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AUD 0.683
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         Smd/SmtPowerdi5060 - 8Cut TapeSi      
BSS138


Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 50V; 0.272A
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Yangjie 3298
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AUD 0.0204
Multiples of: 50

            Trench Power Mv      
2N7002KC


60V 300mA 1.9Ω@10V,300mA 300mW N Channel SOT-23 MOSFETs ROHS
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Yangjie 3298
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AUD 0.022
Multiples of: 50

                   
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