MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RQ1A060ZPTR


MOSFET SW MOSFET MID PWR P-CH 12V -6A
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ROHM 3186
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AUD 0.5385
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6 A- 12 V16 mOhmsP - Channel10 V - 55 C+ 150 C1.5 WSmd/SmtT SMT - 8ReelSi1 Channel10 V34 nCEnhancement  
BSC042NE7NS3 G


MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3
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Infineon 3186
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AUD 2.2817
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100 A75 V3.7 mOhmsN - Channel 2.3 V- 55 C+ 150 C125 WSmd/SmtTDSON - 8ReelSi1 Channel20 V69 nCEnhancement Optimos
IRLZ34PBF-BE3


N-Channel 60V 30A (Tc) 88W (Tc) Through Hole TO-220AB
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Vishay 3183
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AUD 1.5467
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30 A60 V50 mOhmsN - Channel 2 V- 55 C+ 175 C88 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 10 V , + 10 V35 nCEnhancement  
NTBLS1D7N08H


MOSFET T8-80V IN TOLL FOR INDUSTRIAL MARKET
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ON Semiconductor 3182
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AUD 4.203
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203 A80 V1.7 mOhmsN - Channel 4 V- 55 C+ 175 C167 WSMD/SMTTO - LL8 - 8 Si1 Channel- 20 V , + 20 V121 nCEnhancement  
BSC030N04NSGATMA1


Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
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Infineon 3178
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AUD 0.5663
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            Optimos 3      
HSW6815


20V 4A 750mW 38m@4.5V,4A 700mV@250uA 2 P-Channel SOT-23-6L MOSFETs ROHS
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HUASHUO 3162
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AUD 0.1034
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DMP3099L-7-HXY


30V 4.2A 55mΩ@10V 1.3V P Channel SOT-23 MOSFETs ROHS
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HXY MOS 3142
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AUD 0.0357
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SI2304DDS


SOT-23 MOSFETs ROHS
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GOODWORK 3084
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AUD 0.0276
Multiples of: 20

                   
SQ2319ADS-T1_BE3


MOSFET P-CHANNEL 40V D-S
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Vishay 1522
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AUD 0.6379
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           Cut Tape       
IPB200N25N3 G


MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3
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Infineon 506
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AUD 5.5493
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64 A250 V17.5 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V86 nCEnhancement Optimos
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