MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMTH45M5LPSWQ-13


MOSFETs MOSFET BVDSS: 31V-40V PowerDI5060-8/SWP T&R 2.5K
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Diodes Incorporated 3578
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AUD 0.5762
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           Reel , Cut TapeSi      
DMN3027LFG-7


MOSFET N-Ch Enh Mode FET 30Vdss 25Vgss 70A
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Diodes Incorporated 3577
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AUD 0.3894
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5.3 A30 V13.5 mOhmsN - Channel 900 mV- 55 C+ 150 C1 WSmd/SmtPowerdi3333 - 8ReelSi1 Channel+/- 25 V11.3 nCEnhancement  
ZXMC3F31DN8TA


MOSFET 30V S08 Dual MOSFET 20V VBR 4.5V Gate
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Diodes Incorporated 3575
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AUD 0.4121
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7.3 A , 5.3 A30 V24 mOhms , 80 mOhmsN - Channel, P - Channel 1 v , 3 V- 55 C+ 150 C1.25 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V12.9 nC , 12.7 nCEnhancement  
BSZ018NE2LS


MOSFET N-Ch 25V 40A TDSON-8 OptiMOS
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Infineon 3573
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AUD 1.3289
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40 A25 V1.8 mOhmsN - Channel 2 V- 55 C+ 150 C69 WSmd/SmtTDSON - 8ReelSi1 Channel20 V29 nC  Optimos
DMN2005UFG-13


MOSFET 20V N-Ch Enh Mode FET 12Vgss 1.05W
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Diodes Incorporated 3572
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AUD 0.33
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18.1 A20 V8.7 mOhmsN - Channel 700 mV- 55 C+ 150 C2.27 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel12 V68.8 nCEnhancement  
NP60N03QR


30V 60A 28W 4mΩ@10V,20A 1.6V@250uA 261pF@20V N Channel 2161pF@20V 42.3nC@4.5V -55℃~+150℃@(Tj) PDFN3x3-8L MOSFETs ROHS
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NATLINEAR 3569
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AUD 0.172
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DMP6110SFDF-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 3569
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AUD 0.2619
Multiples of: 1

          U - DFN2020 - 6Cut TapeSi      
SL3407-TP


MOSFET P Trench 30V 4.3A 3V @ 250uA 60 mΩ @ 4.1A,10V SOT-23-3L RoHS
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Micro Commercial Components (MCC) 3568
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AUD 0.1048
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4.3 A30 V49 mOhmsP - Channel 3 V- 55 C+ 150 C1.5 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V-Enhancement  
IRL60HS118


Transistor: N-MOSFET; unipolar; 60V; 13A; 5.8W; PQFN2X2
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Infineon 3566
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AUD 0.6044
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            Optimos 5      
NDT2955


Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223
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ON Semiconductor 3167
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AUD 0.3366
Multiples of: 5

                   
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