MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SH8J66TB1


MOSFET Pch+Pch -30V -9A MOSFET
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ROHM 3589
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AUD 1.6832
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9 A30 V19 mOhmsP - Channel   + 150 C2 WSmd/SmtSOP - 8ReelSi      
SE2301


MOSFET P Trench 20V 2.8A 450mV @ 250uA（Min） 100 mΩ @ 2.8A,4.5V SOT-23 (SOT-23-3) RoHS
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SINO-IC 3589
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AUD 0.0306
Multiples of: 20

                   
ZXMN2F30FHTA


SOT-23 MOSFETs ROHS
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TECH PUBLIC 3589
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AUD 0.0617
Multiples of: 10

                   
SSM6J213FE(TE85L,F


Toshiba MOSFET P-Ch U-MOS VI FET ID -2.6A -20V 290pF
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Toshiba 3589
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AUD 0.4643
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- 2.6 A- 20 V250 mOhmsP - Channel - 0.3 v to - 1 V- 55 C+ 150 C500 mWSmd/SmtSOT - 23 - 6ReelSi1 Channel8 V4.7 nC   
SISS64DN-T1-GE3


MOSFET 30V Vds 20V Vgs PowerPAK 1212-8S
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Vishay 3589
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AUD 1.003
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40 A30 V1.8 mOhmsN - Channel 1.1 V- 55 C+ 150 C57 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi1 Channel- 16 v , 20 V68 nCEnhancement Trenchfet, Powerpak
FDS6986AS


MOSFET 30V Dual SyncFET
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ON Semiconductor 3589
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AUD 1.2385
Multiples of: 621

6.5 A30 V20 mOhmsN - Channel  - 55 C+ 150 C2 WSmd/SmtSOIC - 8ReelSi2 Channel16 v , 20 V Enhancement Powertrench Syncfet
STP15N65M5


MOSFET N-Ch 650V .0308 Ohm 11A MDmesh V MOS
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STMicroelectronics 3587
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AUD 1.7758
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11 A650 V340 mOhmsN - Channel    85 WThrough HoleTO - 220TubeSi1 Channel    Mdmesh
SPD18P06P G


MOSFET P-CH 60V 18.6A
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Infineon 3472
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AUD 0.7508
Multiples of: 1

18.6 A60 V130 mOhmsP - Channel 4 V- 55 C+ 175 C80 WSmd/SmtTO - 252ReelSi1 Channel10 V22 nCEnhancement Sipmos
IAUC60N04S6N031HATMA1


MOSFET MOSFET_(20V 40V)
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Infineon 3298
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AUD 1.1681
Multiples of: 1

113 A40 V3.1 mOhmsN - Channel 3 V- 55 C+ 175 C75 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V23 nCEnhancement OptiMOS
SQ2364EES-T1_GE3


MOSFET 60V Vds; +/-8V Vgs SOT-23; 4A Id
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Vishay 502
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AUD 0.3703
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2 A60 V240 mOhmsN - Channel 460 mV- 55 C+ 175 C3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel8 V2.5 nCEnhancement  
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