MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3402


SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Bourne 3327
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AUD 0.0439
Multiples of: 10

                   
SED4060GM


MOSFET N Trench 40V 60A 2.2V @ 250uA 9.5 mΩ @ 20A,10V DFN 3x3 RoHS
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SINO-IC 3327
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AUD 0.2839
Multiples of: 5

                   
BSC0910NDIATMA1


Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8
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Infineon 3327
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AUD 1.2379
Multiples of: 1

            Optimos      
IRFH9310TRPBF


P-Channel 30 V 21A (Ta), 40A (Tc) 3.1W (Ta) Surface Mount PQFN (5x6)
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Infineon 3327
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AUD 1.9015
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21 A30 V4.6 mOhmsP - Channel    3.1 WSmd/SmtPQFN - 8ReelSi1 Channel20 V165 nC   
MIC94052YC6-TR


MOSFET P Trench 6V 2A 1.2V @ 250uA 84 mΩ @ 100mA,4.5V SC-70-6 (SOT-363) RoHS
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Microchip 3325
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AUD 1.031
Multiples of: 1

2 A- 6 V70 mOhmsP - Channel1.8 V- 0.5 V- 40 C+ 150 C270 WSmd/SmtSC - 70 - 6ReelSi 1.8 V Enhancement  
BSO110N03MS G


MOSFET OptiMOS 3 M-Series PWR-MOSFET N-CH
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Infineon 3324
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AUD 0.7119
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12.1 A30 V9.2 mOhmsN - Channel 1 V- 55 C+ 150 C2.5 WSmd/SmtDSOReelSi1 Channel20 V20 nCEnhancement Optimos
PJQ4546P-AU_R2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 3322
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AUD 0.5378
Multiples of: 1

64 A40 V5.6 mOhmsN - Channel 2.3 V- 55 C+ 175 C42 WSMD/SMTDFN - 3333 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V20 nCEnhancementAEC - Q101 
BSP125H6327XTSA1


Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
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Infineon 3321
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AUD 0.3316
Multiples of: 1

            Sipmos      
DMN6069SFGQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 3319
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AUD 0.4466
Multiples of: 1

18 A60 V39 mOhmsN - Channel 1 V- 55 C+ 150 C2.4 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel20 V25 nCEnhancementAec - Q101 
BSZ086P03NS3E G


Infineon Technologies MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3
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Infineon 3319
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between Tue. 03 Mar to Thu. 05 Mar Calender.png

AUD 0.5659
Multiples of: 1

13.5 A- 30 V8.6 mOhmsP - Channel25 V- 3.1 V- 55 C+ 150 C69 WSmd/SmtTSDSON - 8ReelSi1 Channel25 V21.4 nCEnhancement Optimos
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