MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STD35P6LLF6


Transistor: P-MOSFET; unipolar; -60V; -25A; 70W; DPAK
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STMicroelectronics 3318
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AUD 0.9352
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2V7002LT1G


N-Channel 60 V 115mA (Tc) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
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ON Semiconductor 3317
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AUD 0.1191
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115 mA60 V7.5 OhmsN - Channel20 V1 v to 2.5 V- 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V EnhancementAec - Q101 
PJE138KTB89_R1_00701


MOSFETs 50V N-Channel Enhancement Mode MOSFET, 50 V, 350 mA
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Panjit 3313
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AUD 0.0985
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350 mA50 V2.5 OhmsN - Channel 1.5 V- 55 C+ 150 C223 mWSMD/SMTSC - 89 - 3Reel , Cut TapeSi1 Channel20 V630 pCEnhancement  
Hot BSC010N04LS


Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
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Infineon 3310
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AUD 0.674
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100 A40 V1 mOhmsN - Channel 1.2 V- 55 C+ 150 C139 WSmd/SmtDSON - 8ReelSi1 Channel20 V95 nCEnhancement Optimos
SK3402


MOSFET N Trench 30V 4.2A 2.5V @ 250uA 50 mΩ @ 4A,10V SOT-23 (SOT-23-3) RoHS
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Shikues 3307
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AUD 0.0451
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HSBB02P15


150V 2A 640mΩ@10V,1A 7.7W 3V@250uA 23pF@75V P Channel 400pF@75V 4.5nC@10V -55℃~+150℃@(Tj) PRPAK3x3 MOSFETs ROHS
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HUASHUO 3307
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AUD 0.211
Multiples of: 5

                   
DMPH6050SPDQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 3307
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AUD 0.8324
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           Cut Tape       
FDMC86244


MOSFET 150V N-Channel PowerTrench MOSFET
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ON Semiconductor 3307
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AUD 0.9009
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15 A150 V134 mOhmsn - channel   + 150 C26 Wsmd/smtMLP 3.3 x 3.3Reelsi1 channel 2.4 nC , 4.2 nC  powertrench
AO3400A


30V 5.8A 350mW 35mΩ@10V,5.8A 1.4V@250uA null SOT-23 MOSFETs ROHS
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FUXINSEMI 3298
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AUD 0.0306
Multiples of: 10

                   
IPD60R400CE


600V 14.7A 400mO@10V,3.8A 112W N Channel TO-252-3 MOSFETs ROHS
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Infineon 3295
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AUD 0.7199
Multiples of: 1

                   
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