MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
R6009ENXC7G


MOSFET 600V POWER MOSFET
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ROHM 3586
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AUD 2.5192
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9 A600 V535 mOhmsN - Channel 4 V- 55 C+ 155 C48 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V , - 30 V , + 30 V23 nCEnhancement  
IAUS300N08S5N012TATMA1


MOSFET MOSFET_(75V 120V(
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Infineon 3585
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AUD 4.9762
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300 A80 V1.2 mOhmsN - Channel 3.8 V- 55 C+ 175 C375 WSMD/SMTHSOG - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V178 nCEnhancement  
AP85N04Q


40V 65A 5mΩ@20V,65A null PDFN-8L(3x3) MOSFETs ROHS
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Quan Li 3584
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AUD 0.372
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RJU003N03FRAT106


MOSFET, N-CH, AEC-Q101, 30V, 0.3A, UMT-3
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ROHM 3580
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AUD 0.1155
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   N Channel               
FDML7610S


MOSFET 30V N-Channel PowerTrench
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ON Semiconductor 3580
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AUD 1.0057
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30 A30 V7.5 mOhmsN - Channel  - 55 C+ 150 C2.2 WSmd/SmtMLP 3 x 4.5ReelSi2 Channel20 V20 nC , 43 nC  Power Stage Powertrench Syncfet
DMNH6021SPSQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 3579
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AUD 0.5256
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55 A60 V12 mOhmsN - Channel 1 V- 55 C+ 175 C53 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel20 V19.7 nCEnhancementAec - Q101 
IPD60N10S412ATMA1


MOSFET N-CHANNEL 100+
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Infineon 3579
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AUD 0.9516
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 600 V N - Channel     Smd/SmtTO - 252 - 3Cut TapeSi1 Channel   Aec - Q101 
BSC900N20NS3 G


Infineon Technologies MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
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Infineon 3579
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AUD 1.1052
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15.2 A200 V77 mOhmsN - Channel20 V2 V- 55 C+ 150 C62.5 WSmd/SmtTDSON - 8ReelSi1 Channel10 V9 nCEnhancement  
DMG1013UWQ-7


20V 820mA 310mW 750mO@4.5V,430mA P Channel SOT-323-3 MOSFETs ROHS
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Diodes Incorporated 3467
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AUD 0.0821
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820 mA20 V1.5 OhmsP - Channel 1 V- 55 C+ 150 C310 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel6 V622.4 pCEnhancementAec - Q101 
IRFR024PBF


N-Channel 60 V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
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Vishay 146
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AUD 0.8567
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         Smd/SmtTO - 252 - 3TubeSi      
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