MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CSD16301Q2


N-Channel 25 V 5A (Tc) 2.3W (Ta) Surface Mount 6-SON
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Texas Instruments 3492
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AUD 0.2013
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5 A25 V24 mOhmsN - channel 900 mV- 55 C+ 150 C15 WSmd/smtSON - 6ReelSi1 Channel8 V2 nCEnhancement Nexfet
RQ7E055ATTCR


MOSFET Pch -30V -5.5A Si MOSFET
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ROHM 3348
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AUD 0.7495
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5.5 A30 V19.3 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.5 WSmd/SmtT SMT - 8Cut TapeSi1 Channel20 V18.8 nCEnhancement  
BSC070N10NS3GATMA1


Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
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Infineon 3347
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AUD 0.8638
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            Optimos 3      
PSMN2R8-80BS,118


MOSFET Std N-chanMOSFET
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Nexperia 3347
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AUD 2.5612
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120 A80 V3 mOhmsN - Channel  - 55 C+ 175 C306 WSmd/SmtTO - 263 - 3-Si1 Channel20 V    
SI3458BDV


SOT-163 MOSFETs ROHS
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TECH PUBLIC 3346
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AUD 0.1803
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BSC030N04NSGATMA1


Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
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Infineon 3346
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AUD 0.5872
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            Optimos 3      
IAUCN04S7L006ATMA1


MOSFETs N
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Infineon 3344
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AUD 1.2658
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380 A40 V600 uOhmsN - Channel 1.5 V- 55 C+ 175 C164 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 16 V , + 16 V95 nCEnhancement  
HSS4P06


SOT-23 MOSFETs ROHS
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HUASHUO 3341
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AUD 0.112
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FDS6680A


SOP-8 MOSFETs ROHS
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TECH PUBLIC 3341
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AUD 0.2372
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MCAC65N06YHE3-TP


MOSFETs
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Micro Commercial Components (MCC) 3341
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AUD 0.8701
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65 A60 V5.2 mOhmsN - Channel 2.5 V- 55 C+ 175 C100 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V34.5 nCEnhancement  
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