MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CJAB25P03


MOSFET P Channel 30V 25A 3V @ 250uA 20mO @ 10A,10V PDFNWB3.3x3.3-8L RoHS
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Changjing Electronics Technology 3622
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AUD 0.2222
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EFC4K110NUZTDG


MOSFET Dual NCH 24V 25A
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ON Semiconductor 3622
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AUD 1.4527
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ZXMP10A16KTC


P-Channel 100 V 3A (Ta) 2.15W (Ta) Surface Mount TO-252-3
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Diodes Incorporated 3621
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AUD 0.7141
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4.6 A100 V235 mOhmsP - Channel 2 V- 55 C+ 150 C9.76 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V16.5 nCEnhancement  
SSM6J216FE,LF


MOSFET LowON Res MOSFET ID=--4.8A VDSS=-12V
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Toshiba 3613
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AUD 0.1851
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4.8 A12 V26 mOhmsP - Channel 1 V-+ 150 C700 mWSmd/SmtSOT - 563 - 6Cut TapeSi1 Channel8 V12.7 nCEnhancement  
PMF170XP.115


Transistor: P-MOSFET; unipolar; -20V; -0.7A; 360mW; SOT323
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Nexperia 3612
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AUD 0.1311
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IRF7104TRPBF


MOSFET 2 P Channel (Dual) 20V 2.3A 3V @ 250uA 250 mΩ @ 1A,10V SO-8_3.9mm RoHS
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Infineon 3611
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AUD 0.5307
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2.3 A20 V250 mOhmsP - Channel    2 WSmd/SmtSOIC - 8ReelSi2 Channel12 V9.3 nC   
WSD30L120DN56


MOSFET P Trench 30V 120A (Tc) 2.5V @ 250uA 3.6 mΩ @ 30A,10V DFN 5x6-8 RoHS
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Winsok 3610
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AUD 0.9226
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WST2304A


SOT-23 MOSFETs ROHS
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Winsok 3609
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AUD 0.0434
Multiples of: 10

                   
BSC019N04NS G


Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
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Infineon 712
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AUD 0.6726
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29 A40 V1.9 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V Enhancement Optimos
IPD135N08N3GATMA1


MOSFET TRENCH 40<-<100V
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Infineon 631
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AUD 0.7037
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 80 V N - Channel     Smd/SmtTO - 252 - 3Cut TapeSi1 Channel    Optimos
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