MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLTS6342TRPBF


Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
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Infineon 4263
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between Mon. 09 Mar to Thu. 12 Mar Calender.png

AUD 0.1388
Multiples of: 5

8.3 A30 V17.5 mOhmsN - Channel  - 55 C+ 150 C2 WSmd/SmtTSOP - 6ReelSi1 Channel     
DMN2050LFDB-7


MOSFET DUAL N-CH EH MODE 20V 45mOhm 4.5A
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Diodes Incorporated 4248
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AUD 0.2167
Multiples of: 1

   N - Channel     Smd/SmtU - DFN2020 - B - 6Cut TapeSi2 Channel     
FDD770N15A


Fairchild Semiconductor MOSFET 150V18V N Channel PowerTrench MOSFET
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ON Semiconductor 4243
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AUD 0.7782
Multiples of: 1

18 A150 V61 mOhmsN - Channel 2 v to 4 V- 55 C+ 150 C56.8 WSmd/SmtDPAK - 3ReelSi1 Channel20 V8.4 nC  Powertrench
DMS2085LSD-13


Diodes Incorporated MOSFET P-Ch Enh Fet wInt Schottky -20Vbr 20Vr
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Diodes Incorporated 4240
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AUD 0.1428
Multiples of: 1

3.3 A20 V85 mOhmsP - Channel - 1.5 V- 55 C+ 150 C1.1 WSmd/SmtSO - 8ReelSi1 Channel+/- 20 V7.8 nCEnhancement  
DMC67D8UFDBQ-7


MOSFET MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 3K
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Diodes Incorporated 4238
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AUD 0.2397
Multiples of: 5

                   
IRFH8318TRPBF


MOSFET N Trench 30V 27A 2.35V @ 50uA 3.1 mΩ @ 20A,10V PQFN 5x6 RoHS
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Infineon 4236
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AUD 0.4548
Multiples of: 1

120 A30 V4.6 mOhmsN - Channel 1.8 V- 55 C+ 150 C3.6 WSmd/SmtPQFN - 8ReelSi1 Channel20 V41 nC   
ZXMN10A25KTC


Diodes Incorporated MOSFET N-Chan 100V MOSFET (UMOS)
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Diodes Incorporated 4205
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AUD 0.8143
Multiples of: 1

6.4 A100 V125 mOhmsN - Channel20 V4 V- 55 C+ 150 C2.11 WSmd/SmtTO - 252 - 2ReelSi1 Channel20 V9.6 nCEnhancement  
RD3R05BBHTL1


MOSFETs RD3R05BBH is a power MOSFET with low on-resistance and high power package, suitable for switching.
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ROHM 3677
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AUD 2.6269
Multiples of: 1

50 A150 V35 mOhmsN - Channel 4 V- 55 C+ 150 C89 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , + 20 V37 nCEnhancement  
DMP4015SPS-13


MOSFET MOSFET BVDSS: 41V-60 DI5060-8 T&R 2.5K
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Diodes Incorporated 3275
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AUD 0.5237
Multiples of: 1

8.5 A40 V11 mOhmsP - Channel 1.5 V- 55 C+ 150 C2.1 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel10 V47.5 nCEnhancement  
PHP45NQ10T,127


Trans MOSFET N-CH 100V 47A 3-Pin(3+Tab) TO-220AB Rail
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Nexperia 1193
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AUD 3.9412
Multiples of: 1

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