MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Transistor Polarity
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXFH22N60P3


MOSFET 600V 22A 0.36Ohm PolarP3 Power MOSFET
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IXYS 4300
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AUD 5.2537
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22 A600 V360 mOhmsn - channel 5 V  500 Wthrough holeTO - 247 - 3Tubesi1 channel30 V38 nC  hiperfet
IPP60R190C6


MOSFET 600V CoolMOS C6 Power Transistor
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Infineon 4298
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AUD 1.9866
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20.2 A600 V170 mOhmsN - Channel 2.5 V- 55 C+ 150 C151 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V63 nCEnhancement Coolmos
EFC4C012NLTDG


MOSFET NCH 30V 30A WLCSP6 DUAL N-CHAN
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ON Semiconductor 4297
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AUD 1.6582
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19 A30 V5 mOhms , 5 mOhmsN - Channel 1.3 V + 150 C2.5 WSmd/SmtWLCSP - 6Cut TapeSi2 Channel20 V18 nC , 18 nCEnhancement  
IQD063N15NM5SCATMA1


MOSFETs TRENCH >=100V
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Infineon 4293
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AUD 3.9567
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151 A150 V6.32 mOhmsN - Channel 4.6 V- 55 C+ 175 C333 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V48 nCEnhancement OptiMOS
PJQ4431EP-AU_R2_002A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 4169
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AUD 0.6009
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78 A30 V7 mOhmsP - Channel 2.5 V- 55 C+ 175 C68 WSMD/SMTDFN - 3333 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V68 nCEnhancementAEC - Q101 
NVMFWS0D45N04XMT1G


MOSFETs 40V T10M IN SO8FL HEFET PACKAGE
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ON Semiconductor 4123
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AUD 2.8239
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469 A40 V450 uOhmsN - Channel 3.5 V- 55 C+ 175 C180 WSMD/SMTDFNW - 5Reel , Cut Tape 1 Channel+ 20 V115 nCEnhancement  
DN2450K4-G


MOSFET N Trench 500V 350mA (Tj) 10 Ω @ 300mA,0V TO-252-2 (DPAK) RoHS
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Microchip 3036
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AUD 0.9818
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SIR180ADP-T1-RE3


N-Channel 60V 35A (Ta), 137A (Tc) 5.4W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 2001
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AUD 1.2757
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          Powerpak® SO - 8Tape And ReelMosfet (Metal Oxide)      
SIRA99DP-T1-RE3


MOSFETs P-CHANNEL 30-V (D-S) MOSFET
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Vishay 635
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AUD 2.4463
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195 A30 V1.7 mOhmsP - Channel 2.5 V- 55 C+ 150 C104 WSMD/SMTPOWERPAK 1212 - 8 Si1 Channel- 20 V , + 16 V172.5 nCEnhancement TrenchFET
SI7115DN-T1-E3


MOSFET -150V Vds 20V Vgs PowerPAK 1212-8
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Vishay 118
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AUD 1.43
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   P - Channel  - 50 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel       
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