MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TX50N06


MOSFET N Channel 60V 50A(Tc) 2.5V @ 250uA 20mO @ 20A,10V TO-252 RoHS
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XDS 4290
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AUD 0.2532
Multiples of: 5

                   
SI2309-HXY


60V 2A 1.5W 160mΩ@10V P Channel SOT-23 MOSFETs ROHS
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HXY MOS 4288
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AUD 0.0498
Multiples of: 10

                   
RFD12N06RLESM9A


Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
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ON Semiconductor 4285
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AUD 0.7372
Multiples of: 1

   N Channel               
PSMN4R3-40MLHX


MOSFET PSMN4R3-40MLHX
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Nexperia 4284
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AUD 0.6288
Multiples of: 1

           Cut Tape       
IRFH7932TRPBF


N-Channel 30 V 24A (Ta), 104A (Tc) 3.4W (Ta) Surface Mount PQFN (5x6) Single Die
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Infineon 4284
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AUD 0.7437
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104 A30 V3.9 mOhmsN - Channel 2.35 V- 55 C+ 150 C3.4 WSmd/SmtPQFN - 8ReelSi1 Channel20 V34 nCEnhancement Strongirfet
BSC032NE2LSATMA1


Transistor: N-MOSFET; unipolar; 25V; 84A; 37W; PG-TDSON-8
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Infineon 4279
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AUD 0.44
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            Optimos      
DI105N04PQ-AQ


MOSFETs MOSFET, PowerQFN 5x6, 40V, 105A, 150C, N, AEC-Q101
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Diotec 4270
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AUD 0.7503
Multiples of: 1

105 A40 V2.6 mOhmsN - Channel 1.4 V- 55 C+ 150 C83 WSMD/SMTQFN - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V23 nCEnhancementAEC - Q101 
IQDH45N04LM6SCATMA1


MOSFETs TRENCH <= 40V
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Infineon 4185
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AUD 3.0701
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611 A40 V490 uOhmsN - Channel 2.3 V- 55 C+ 175 C333 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V62 nCEnhancement OptiMOS
LSI1012XT1G


20V 500mA 250mW 410mΩ@4.5V,600mA 900mV@250uA N Channel SC-89 MOSFETs ROHS
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Leshan 4151
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AUD 0.0375
Multiples of: 20

                   
CPC3708CTR


MOSFET N-Channel Depletion Mode FET
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IXYS 4010
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AUD 0.4991
Multiples of: 1

5 mA350 V8 OhmsN - Channel  - 40 C+ 110 C1.1 WSmd/SmtSOT - 89 - 3Cut TapeSi1 Channel20 V Depletion Clare
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