MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM6P69NU,LF


MOSFET Small Signal MOSFET P-ch x 2 VDSS=-20V, VGSS=+6/-12V, ID=-4.0A, in UDFN6 package
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Toshiba 7122
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AUD 0.1921
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           Cut Tape      U - Mosvi
DMG1016UDW-7


MOSFET 20V Vdss 6V VGSS Complementary Pair
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Diodes Incorporated 4326
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AUD 0.0651
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1.066 a , 845 mA20 V450 mOhms , 750 mOhmsN - Channel, P - Channel 500 mV- 55 C+ 150 C330 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel4.5 V736.6 nC , 622.4 pCEnhancement  
FDS6679AZ


SOP-8 MOSFETs ROHS
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TECH PUBLIC 4311
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AUD 0.2436
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IPD90N04S4L-04


MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
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Infineon 4310
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AUD 0.6255
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90 A40 V3.8 mOhmsN - Channel 1.2 V- 55 C+ 175 C71 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 v , 16 V60 nCEnhancementAec - Q101Optimos
SH8KA4TB1


MOSFET 30V Nch+Nch Power MOSFET
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ROHM 4306
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AUD 0.8577
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9 A30 V21.4 mOhmsN - Channel 2.5 V- 55 C+ 150 C3 WSMD/SMTSOP - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V15.5 nCEnhancement  
IQDH45N04LM6ATMA1


MOSFETs N
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Infineon 4303
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AUD 3.1938
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637 A40 V450 uOhmsN - Channel 2.3 V- 55 C+ 175 C333 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V62 nCEnhancement  
IQDH88N06LM5ATMA1


MOSFETs N
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Infineon 4303
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AUD 3.6185
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447 A60 V860 uOhmsN - Channel 2.3 V- 55 C+ 175 C333 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V76 nCEnhancement  
BSZ105N04NSGATMA2


MOSFETs TRENCH <= 40V
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Infineon 4195
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AUD 0.2676
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40 A40 V10.5 mOhmsN - Channel 4 V- 55 C+ 150 C35 WSMD/SMTTSDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V13 nCEnhancement  
FDMS5672


Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8
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ON Semiconductor 1012
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AUD 2.791
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            Powertrench®      
XSM6K376NW,LXHF


MOSFETs N-ch MOSFET, 30 V, 4.0 A, 0.056Ohma.4.5V, DFN2020B(WF)Automotive
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Toshiba 149
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AUD 0.0706
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10 A30 V56 mOhmsN - Channel 1 V + 150 C3.3 WSMD/SMTDFN2020B - 6Reel , Cut TapeSi1 Channel- 8 V , 12 V2.2 nCEnhancement  
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