MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TSM011NM03LCR RGG


MOSFETs 30V, 120A, Single, N-Channel Low Voltage MOSFETs
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Taiwan Semiconductor 4832
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AUD 0.8611
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239 A30 V1.1 mOhmsN - Channel 2.5 V- 55 C+ 150 C96 WSMD/SMTPDFN56 - 8Reel , Cut TapeSi1 Channel20 V79 nCEnhancement  
JMSL0603BGQ-13


PDFN5x6-8L MOSFETs ROHS
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JieJie 4421
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AUD 1.0514
Multiples of: 1

                   
DMC3028LSDX-13


MOSFET 30V Dual FET 28mOHm 10V VGS 7.1A
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Diodes Incorporated 4355
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AUD 0.475
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5.5 A , 5.8 A30 V19 mOhms , 21 mOhmsN - Channel, P - Channel 1 v , 3 V- 55 C+ 150 C1.2 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V13.2 nC , 22 nCEnhancement  
Hot IPP200N15N3GXKSA1


Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
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Infineon 4354
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AUD 1.8224
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            Optimos 3      
DMP3045LVT-7


MOSFET MOSFET BVDSS: 25V~30V TSOT26 T&R 3K
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Diodes Incorporated 4353
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AUD 0.2233
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5.4 A30 V42 mOhmsP - Channel 2.1 V- 55 C+ 150 C1.2 WSMD/SMT  Si1 Channel- 20 V , + 20 V7 nCEnhancement  
IPD60N10S412ATMA1


MOSFET N-CHANNEL 100+
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Infineon 4352
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AUD 0.9654
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 600 V N - Channel     Smd/SmtTO - 252 - 3Cut TapeSi1 Channel   Aec - Q101 
NTBLS4D0N15MC


MOSFET PTNG 150V IN CEBU TOLL FOR INDUSTRIAL
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ON Semiconductor 4349
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AUD 5.1388
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187 A150 V4.4 mOhmsN - Channel 4.5 V- 55 C+ 175 C316 WSMD/SMTTO - LL8 - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V90.4 nCEnhancement  
TNM3K60FEX


60V 300mA 1V 1PCSNChannel SOT-523 MOSFETs ROHS
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Shenzhen JingYang 4345
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AUD 0.0351
Multiples of: 20

                   
AO4441(UMW)


SOP-8 MOSFETs ROHS
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Youtai 4287
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AUD 0.1882
Multiples of: 5

                   
SI4447ADY-T1-GE3


40V 7.2A 45mO@5A,10V 4.2W P Channel SO-8 MOSFETs ROHS
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Vishay 1370
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AUD 0.5104
Multiples of: 1

7.2 A- 40 V45 mOhmsP - Channel20 V- 1.2 v to - 2.5 V- 55 C+ 150 C4.2 WSmd/SmtSO - 8Reel   11.8 nCEnhancement Trenchfet
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