MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
MCAC80N06Y-TP


MOSFET 800V 4A N Channel M osfet
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Micro Commercial Components (MCC) 4366
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AUD 0.9818
Multiples of: 1

           Cut Tape       
QS6U24TR


P-Channel 30 V 1A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95)
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ROHM 4365
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AUD 0.307
Multiples of: 1

1 A- 30 V600 mOhmsP - Channel20 V - 55 C+ 150 C900 mWSmd/SmtT SMT - 6ReelSi1 Channel20 V Enhancement  
DMP3099L-13


Diodes Incorporated MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A
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Diodes Incorporated 4365
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AUD 0.0735
Multiples of: 4500

- 3.8 A- 30 V65 mOhmsP - Channel20 V- 1 V- 55 C+ 150 C1.08 WSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V11 nCEnhancement  
50P04


40V 52A 8.3mΩ 2.5V P Channel TO-252 MOSFETs ROHS
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HL 4365
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AUD 0.1736
Multiples of: 5

                   
NTMFS4943NT1G


Trans MOSFET N-CH 30V 14A 5-Pin(4+Tab) SO-FL T/R
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ON Semiconductor 4365
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AUD 0.2483
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41 A30 V11 mOhmsn - channel  - 55 C+ 150 C2.6 Wsmd/smtSO - 8FLReel 1 channel20 V    
IPS060N03LGAKMA1


Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-251 Tube
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Infineon 4365
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AUD 0.3431
Multiples of: 1

50 A30 V5 mOhmsn - channel 1 V- 55 C+ 175 C56 Wthrough holeTO - 251 - 3Tubesi1 channel20 V30 nCenhancement optimos
PMDT290UNEH


MOSFET PMDT290UNESOT666SOT6
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Nexperia 4364
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AUD 0.1625
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800 mA20 V380 mOhmsN - Channel 950 mV- 55 C+ 150 C1.09 WSMD/SMTSOT - 666 - 6Cut Tape , Reel , ReelSi2 Channel- 8 V , + 8 V450 pCEnhancement  
FDC606P-MS


20V 4.5A 40mΩ@4.5V,3A 1.56W 1.1V@250uA P Channel SOT-23-6 MOSFETs ROHS
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MSKSEMI 2987
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AUD 0.0832
Multiples of: 5

                   
NTTFS4C05NTAG


ON Semiconductor MOSFET
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ON Semiconductor 1852
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AUD 0.3799
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75 A30 V3.6 mOhmsN - Channel     Smd/SmtWDFN - 8ReelSi      
DMP45H150DHE-13


MOSFET MOSFET BVDSS: 251V-500V
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Diodes Incorporated 334
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AUD 0.3043
Multiples of: 5

250 mA450 V40 OhmsP - Channel 2 V- 55 C+ 150 C13.9 WSmd/SmtSOT - 223 - 3 Si1 Channel10 V1.8 nCEnhancement  
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