MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ME15N10-G


MOSFET N Trench 100V 14.7A (Tc) 3V @ 250uA 100 mΩ @ 8A,10V TO-252-2 (DPAK) RoHS
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MQTSUKI 4408
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AUD 0.1793
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IPB048N15N5ATMA1


MOSFET TRENCH >=100V
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Infineon 4392
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AUD 3.719
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120 A150 V3.7 mOhmsN - Channel 3 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 3ReelSi1 Channel+/- 20 V100 nCEnhancement Optimos
WM02DH08D


Transistor: N/P-MOSFET; unipolar; SOT363
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Wayon 4391
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AUD 0.0773
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TK6P60W,RVQ


Toshiba MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC
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Toshiba 4387
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AUD 1.21
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6.2 A600 V680 mOhmsN - Channel 2.7 v to 3.7 V- 55 C+ 150 C60 WSmd/SmtDPAK - 3ReelSi1 Channel30 V12 nCEnhancement  
AGM40P30AP


40V 33A 59W 26@10V,10A 1.6V@250uA 1PCSPChannel DFN3.3x3.3 MOSFETs ROHS
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AGM-Semi 4374
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AUD 0.1316
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TPN6R303NC,LQ(S


30V 20A 19W 6.3mΩ@10V,10A 2.3V@200uA N Channel TSON-8(3.1x3.1) MOSFETs ROHS
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Toshiba 4369
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AUD 0.1475
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FDMA410NZ


MOSFET 20V Single N-Ch 1.5V Specified PowerTrnch
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ON Semiconductor 4074
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AUD 0.6107
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9.5 A20 V23 mOhmsN - Channel  - 55 C+ 150 C2.4 WSmd/SmtMICRO - FETReelSi1 Channel8 V Enhancement Powertrench
AO3414


SOT-23 MOSFETs ROHS
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TECH PUBLIC 3521
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AUD 0.0532
Multiples of: 10

                   
YJG25GP10AQ


PDFN5060-8L MOSFETs ROHS
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Yangjie 3358
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AUD 0.8181
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AO7800


SOT-363 MOSFETs ROHS
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TECH PUBLIC 0
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AUD 0.1256
Multiples of: 5

                   
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