MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CRSM034N06L2


DFN-8(5.1x5.9) MOSFETs ROHS
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CRMICRO 8291
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AUD 0.435
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SiSA26DN-T1-GE3


MOSFET 25V Vds 16V Vgs PowerPAK 1212-8
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Vishay 4365
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AUD 0.5907
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60 A25 V2.15 mOhmsN - Channel 1 V- 55 C+ 150 C39 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi1 Channel- 12 v , 16 V44 nCEnhancement  
NVTFWS002N04XMTAG


MOSFETs 40V T10M IN U8FL PACKAGE
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ON Semiconductor 4365
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AUD 0.706
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114 A40 V2.45 mOhmsN - Channel 3.5 V- 55 C+ 175 C62 WSMD/SMTWDFN - 8Reel , Cut TapeSi1 Channel+ 20 V22 nCEnhancement  
NVMFS5C426NLT1G


MOSFET 40V 1.2 MOHM T6 S08FL SIN
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ON Semiconductor 4365
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AUD 3.0597
Multiples of: 1500

237 A40 V1.2 mOhmsN - Channel 1.2 V- 55 C+ 175 C128 WSmd/SmtSO - 8FL - 8Cut TapeSi1 Channel20 V93 nCEnhancement  
LSIC1MO120E0080


MOSFET 1200V 80mOhm SiC MOSFET
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Littelfuse 4365
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AUD 23.7077
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39 A1.2 kV80 mOhmsN - Channel 2.8 V- 55 C+ 150 C179 WThrough HoleTO - 247 - 3TubeSic1 Channel20 v , - 5 V95 nCEnhancement  
TSM4436CS RLG


MOSFET 60V 8A Single N-Channel Power MOSFET
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Taiwan Semiconductor 4363
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AUD 0.3468
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8 A60 V30 mOhmsN - Channel 1 V- 55 C+ 150 C2.5 WSmd/SmtSOP - 8Cut TapeSi1 Channel10 V10.5 nCEnhancement  
MCG50P03B-TP


MOSFETs P-CHANNEL MOSFET,PDFN3333
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Micro Commercial Components (MCC) 4313
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AUD 0.6813
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50 A30 V19 mOhmsP - Channel 1.8 V- 55 C+ 150 C56 WSMD/SMTPDFN3333 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V38 nCEnhancement  
NVTFWS1D9N04XMTAG


MOSFETs 40V T10M IN U8FL PACKAGE
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ON Semiconductor 4151
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AUD 0.8669
Multiples of: 1

141 A40 V1.9 mOhmsN - Channel 3.5 V- 55 C+ 175 C74 WSMD/SMTWDFN - 8Reel , Cut TapeSi1 Channel+ 20 V30 nCEnhancement  
NTMFS5H600NLT1G


MOSFET T8 60V LOW COSS
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ON Semiconductor 3733
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AUD 2.4795
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250 A60 V1.1 mOhmsN - Channel 1.2 V- 55 C+ 150 C160 WSmd/SmtSO - FL - 8Cut TapeSi1 Channel20 V89 nCEnhancement  
NTD6416ANT4G


ON Semiconductor MOSFET NFET DPAK 100V 19A 96MO
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ON Semiconductor 2425
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AUD 0.8019
Multiples of: 2500

17 A100 V81 mOhmsN - Channel20 V2 v to 4 V- 55 C+ 175 C71 WSmd/SmtDPAK - 3ReelSi1 Channel10 V20 nCEnhancement  
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