MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMA86151L


Fairchild Semiconductor MOSFET
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ON Semiconductor 125130
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AUD 0.869
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3.3 A100 V88 mOhmsN - Channel 2 V- 55 C+ 150 C2.4 WSmd/SmtMICRO - FET - 6ReelSi1 Channel20 V5.2 nCEnhancement Powertrench
FCP400N80Z


MOSFET SuperFET2 800V 400mohm
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ON Semiconductor 4384
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AUD 3.2343
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14 A800 V400 mOhmsn - channel 2.5 V- 55 C+ 150 C195 Wthrough holeTO - 220 - 3Bulksi1 channel+/- 20 v , +/- 30 V43 nCenhancement superfet ii
EFC4619R-TR


MOSFET NCH 2.5V DRIVE SERIES
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ON Semiconductor 4378
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AUD 0.2873
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6 A24 V23 mOhmsN - Channel     Smd/SmtEFCP - 4ReelSi      
PXN5R4-30QLJ


MOSFET MOSFET DISCRETES
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Nexperia 4378
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AUD 0.3415
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14 A30 V5.4 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.8 WSMD/SMTMLPAK33 - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V24.2 nCEnhancement  
IRF6674TRPBF


N-Channel 60 V 13.4A (Ta), 67A (Tc) 3.6W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
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Infineon 4377
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AUD 1.9671
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67 A60 V9 mOhmsN - Channel  - 40 C+ 150 C89 WSmd/SmtDirectfet - 3Reel 1 Channel20 V24 nCEnhancement Directfet
SP30N02NK


PDFN-8L(5x6) MOSFETs ROHS
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Siliup 4365
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AUD 0.1526
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IST006N04NM6AUMA1


MOSFET TRENCH <= 40V
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Infineon 2443
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AUD 2.7418
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475 A40 V600 uOhmsN - Channel 2.1 V- 55 C+ 175 C250 WSMD/SMTSTOLL - 6Reel , Cut TapeSi1 Channel- 10 V , + 10 V127 nCEnhancement OptiMOS
Hot IRF740ASPBF


MOSFET N-Chan 400V 10 Amp
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Vishay 969
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AUD 1.578
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   N Channel      TO - 263 - 3Tube       
FDPF5N50UT


MOSFET 500V N-Channel FRFET, Ultra FRFET
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ON Semiconductor 68
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AUD 0.9884
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4 A500 V1.65 OhmsN - Channel 5 V  28 WThrough HoleTO - 220TubeSi1 Channel30 V11 nC  Unifet Frfet
TM50G03NF


30V DFN-8L(5x6) MOSFETs ROHS
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Tritech-MOS 0
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AUD 0.2686
Multiples of: 5

                   
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