MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMG3406L-13


MOSFET 30V N-Ch Enh Mode 50mOhm 10V 3.6A
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Diodes Incorporated 115500
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AUD 0.0854
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3.6 A30 V25 mOhmsN - Channel 1 V- 55 C+ 150 C770 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V11.2 nCEnhancement  
NTD2955T4G


TO-252 MOSFETs ROHS
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TECH PUBLIC 4345
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AUD 0.4318
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SI2303CDS


SOT-23 MOSFETs ROHS
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TECH PUBLIC 4343
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AUD 0.0766
Multiples of: 5

                   
FDMA7670


Fairchild Semiconductor MOSFET 30V Single N-Channel PowerTrench MOSFET
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ON Semiconductor 4340
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AUD 0.6612
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11 A30 V10 mOhmsn - channel20 V2 V  2.4 Wsmd/smtMICRO - FET - 6 2X2Reelsi1 channel20 V16 nC  powertrench
DMP3085LSS-13


Diodes Incorporated MOSFET P-Ch ENH FET -30V 70mOhm -10V -3.8A
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Diodes Incorporated 4339
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AUD 0.1215
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- 3.8 A , 5.6 A- 30 V70 mOhmsP - Channel+/- 20 V- 3 V- 55 C+ 150 C1.6 WSmd/SmtSO - 8Reel-1 Channel20 V11 nCEnhancement  
BXP4N65U


Transistor: N-MOSFET
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Bridgelux 4333
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AUD 0.2667
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SIJ494DP-T1-GE3


SIJ494DP-T1-GE3**MULT1^9172^3106951
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Vishay 4332
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AUD 1.5542
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36.8 A150 V19.3 mOhmsN - Channel 2.5 V- 55 C+ 150 C69.4 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V31 nCEnhancement Thunderfet, Powerpak
DMT10H015LK3-13


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 4045
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AUD 0.6879
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         Smd/SmtTO - 252 - 3Cut TapeSi      
MCG60N06YHE3-TP


MOSFETs
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Micro Commercial Components (MCC) 3720
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AUD 0.9391
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60 A60 V6 mOhmsN - Channel 2.5 V- 55 C+ 175 C60 WSMD/SMTDFN - 3333 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V34.5 nCEnhancement  
DMC1016UPD-13


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 1219
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AUD 0.4925
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9.5 A , 8.7 A12 v , 20 V9 mOhms , 14 mOhmsN - Channel, P - Channel 600 mV , 1 V- 55 C+ 150 C2.3 WSmd/SmtPowerdi5060 - C - 8Cut TapeSi2 Channel8 V32 nC , 56 nCEnhancement  
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