MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIRA20DDP-T1-UE3


MOSFETs PPAKSO8 N-CH 25V 90A
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Vishay 4369
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AUD 1.0874
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IQD016N08NM5ATMA1


MOSFETs TRENCH 40<-<100V
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Infineon 4369
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AUD 3.9731
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323 A80 V1.57 mOhmsN - Channel 3.8 V- 55 C+ 175 C333 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V106 nCEnhancement  
ISC028N04NM5ATMA1


MOSFET TRENCH <= 40V
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Infineon 4368
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AUD 0.993
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           Cut Tape       
FDD6780A


MOSFET 25V 30A N-Channel PowerTrench
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ON Semiconductor 4366
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AUD 0.8785
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16.4 A25 V8.6 mOhmsn - channel  - 55 C+ 175 C3.7 Wsmd/smtDPAKReelsi1 channel20 V enhancement powertrench
JSM2301SL


SOT-23-3L MOSFETs ROHS
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JSMSEMI 4365
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AUD 0.0236
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SiSA26DN-T1-GE3


MOSFET 25V Vds 16V Vgs PowerPAK 1212-8
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Vishay 4365
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AUD 0.2366
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60 A25 V2.15 mOhmsN - Channel 1 V- 55 C+ 150 C39 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi1 Channel- 12 v , 16 V44 nCEnhancement  
2SK3564(STA4,Q,M)


Trans MOSFET N-CH 900V 3A 3-Pin(3+Tab) TO-220SIS
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Toshiba 4346
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AUD 1.6714
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3 A  N    40 WThrough Hole      Enhancement  
QS6U24TR


P-Channel 30 V 1A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95)
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ROHM 4346
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AUD 0.3415
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1 A- 30 V600 mOhmsP - Channel20 V - 55 C+ 150 C900 mWSmd/SmtT SMT - 6ReelSi1 Channel20 V Enhancement  
SP20P07NJ


PDFNWB-8L(3.3x3.3) MOSFETs ROHS
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Siliup 3860
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AUD 0.1269
Multiples of: 5

                   
IRFR9010PBF


P-Channel 50 V 5.3A (Tc) 25W (Tc) Surface Mount D-Pak
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Vishay 2171
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AUD 0.5878
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   P - Channel  - 55 C+ 150 C Smd/SmtDPAKTubeSi      
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