MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FS3400


30V 5.8A 28mΩ@10V,2.9A 1.4W 900mV@250uA 30pF@15V N Channel 620pF@15V 9.5nC@4.5V -55℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
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FUXINSEMI 4812
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AUD 0.0326
Multiples of: 20

                   
IRF620SPBF


N-Channel 200 V 5.2A (Tc) 3W (Ta), 50W (Tc) Surface Mount D²PAK (TO-263)
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Vishay 4812
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AUD 1.5829
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtD2PAK - 2TubeSi      
R8007AND3FRATL


MOSFET 800V N-CH 7A POWER
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ROHM 4812
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AUD 3.981
Multiples of: 1

7 A800 V1.6 OhmsN - Channel 5 V-+ 150 C140 WSMD/SMTTO - 252 - 3/2Reel , Cut TapeSi1 Channel- 30 V , + 30 V28 nCEnhancement  
NX3008NBKS.115


Transistor: N-MOSFET; unipolar; 30V; 0.35A; 280mW; SOT363
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Nexperia 4811
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AUD 0.0675
Multiples of: 10

                   
BRCS120N03YB


30V 20A 11mΩ@10V 15.5W N Channel DFN-8L(3x3) MOSFETs ROHS
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Blue Rocket 4811
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AUD 0.141
Multiples of: 5

                   
90P03F


PDFN-8L(5x6) MOSFETs ROHS
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HL 4811
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AUD 0.2409
Multiples of: 5

                   
TDM3482C


PPAK-8(3x3) MOSFETs ROHS
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Techcode 4811
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AUD 0.2542
Multiples of: 1

                   
FDMA86151L


Fairchild Semiconductor MOSFET
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ON Semiconductor 4521
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AUD 0.7717
Multiples of: 1

3.3 A100 V88 mOhmsN - Channel 2 V- 55 C+ 150 C2.4 WSmd/SmtMICRO - FET - 6ReelSi1 Channel20 V5.2 nCEnhancement Powertrench
DMP10H400SE-13


MOSFET 100V P-Ch Enh FET 250mOhm -2.3A
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Diodes Incorporated 4040
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AUD 0.2899
Multiples of: 5

6 A100 V250 mOhmsP - Channel 1 V- 55 C+ 150 C13.7 WSmd/SmtSOT - 223 - 4Cut TapeSi1 Channel10 V8.4 nCEnhancement  
BSZ180P03NS3EGATMA1


MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
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Infineon 2822
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AUD 0.1696
Multiples of: 1

39.6 A30 V13.5 mOhmsP - Channel 3.1 V- 55 C+ 150 C40 WSmd/SmtTSDSON - 8Cut TapeSi1 Channel25 V30 nCEnhancement  
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