MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPN60R600P7SATMA1


Transistor: N-MOSFET; unipolar; 600V; 4A; 7W; PG-SOT223
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 4827
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AUD 0.4173
Multiples of: 1

            Coolmos P7      
FDMS7670


MOSFET 30V 42A N-Channel PowerTrench
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ON Semiconductor 4827
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AUD 0.756
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWER 56Reel       
IQD009N06NM5SCATMA1


MOSFETs TRENCH 40<-<100V
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Infineon 4827
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AUD 3.7889
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445 A60 V900 uOhmsN - Channel 3.3 V- 55 C+ 175 C333 WSMD/SMTPG - WHSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V120 nCEnhancement OptiMOS
RQ6E045SNTR


MOSFET NCH 30V 4.5A SMALL SIGNAL
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ROHM 4826
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AUD 0.3651
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4.5 A30 V38 mOhmsN - Channel 1 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 457T - 6Cut TapeSi1 Channel20 V6.8 nCEnhancement  
TSM60NB1R4CP ROG


MOSFET 600V 3A Single N-Cha nnel Power MOSFET
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Taiwan Semiconductor 4826
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AUD 1.8981
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           Cut Tape       
IQDH35N03LM5ATMA1


MOSFETs N
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Infineon 4826
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AUD 3.1385
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700 A30 V350 uOhmsN - Channel 2 V- 55 C+ 150 C278 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V91 nCEnhancement  
WSD3043DN


30V 16A 2.1W 15mΩ@10V,8A 2.5V@250uA 1PCSN-Channel&1PCSP-Channel DFN3X3-8 MOSFETs ROHS
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Winsok 4825
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AUD 0.1892
Multiples of: 5

                   
NCEP3040Q


30V 40A 6.8mΩ@10V,20A 25W 1.5V@250uA N Channel PDFN-8(3.1x3.2) MOSFETs ROHS
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NCE Power 4825
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AUD 0.2117
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MOT3390J


30V 30A 7.4m@10V,15A 40W 2.2V@250uA 1PCSPChannel PDFN3x3 MOSFETs ROHS
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MOT 4825
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AUD 0.2339
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DMP2100U-7


MOSFET 20V P-CH MOSFET
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Diodes Incorporated 4505
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AUD 0.0705
Multiples of: 5

5.5 A20 V38 mOhmsP - Channel 300 mV- 55 C+ 150 C800 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V9.1 nCEnhancement  
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