MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DI114N06PQ


MOSFETs
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Diotec 4436
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AUD 2.08
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BUK9Y7R2-60E,115


MOSFET N-channel 60 V 7.2 mo FET
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Nexperia 4435
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AUD 0.8078
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100 A60 V5.4 mOhmsN - Channel15 V1.7 V- 55 C+ 175 C167 WSmd/SmtLFPAK - 4ReelSi1 Channel15 V35 nCEnhancement  
IRF6623TRPBF


International Rectifier MOSFET 20V 1 N-CH 5.7mOhm DirectFET 11nC
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Infineon 4434
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AUD 1.604
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16 A20 V9.7 mOhmsN - Channel20 V2.2 V- 40 C+ 150 C42 WSmd/SmtDirectfet - 3ReelSi1 Channel20 V11 nC   
AUIRF7769L2TR


International Rectifier MOSFET
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Infineon 4432
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AUD 8.6687
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124 A100 V3.5 mOhmsN - Channel+/- 20 V2 V- 55 C+ 175 C125 WSmd/SmtDirectfet2 - 8ReelSi1 Channel20 V200 nCEnhancementAec - Q101 
RD3P175SNTL1


MOSFET Nch 100V 17.5A TO-252 (DPAK)
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ROHM 4431
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AUD 1.0967
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17.5 A100 V105 mOhmsN - Channel 1 V- 55 C+ 150 C20 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V24 nCEnhancement  
IXFH110N10P


MOSFET 110 Amps 100V 0.015 Rds
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IXYS 4428
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AUD 7.9627
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110 A100 V15 mOhmsn - channel 5 V- 55 C+ 175 C480 Wthrough holeTO - 247 - 3Tubesi1 channel20 V110 nCenhancement hiperfet
SVT078R0ND


MOSFET TO-252 RoHS
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Youtai 4316
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AUD 0.2756
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WSD4038DN


MOSFET N Trench 40V 38A (Tc) 2.5V @ 250uA 13 mΩ @ 7A,10V DFN3x3-8 RoHS
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Winsok 4291
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AUD 0.2634
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WST2N7002A


60V 700mA 140mΩ@10V,500mA 250mW N Channel SOT-23N MOSFETs ROHS
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Winsok 4132
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AUD 0.05
Multiples of: 10

                   
DMP2022LSS-13


P-Channel 20 V 10A (Ta) 2.5W (Ta) Surface Mount 8-SO
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Diodes Incorporated 4032
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AUD 0.4026
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10 A20 V13 mOhmsP - Channel 600 mV- 55 C+ 150 C2.5 WSmd/SmtSO - 8Cut TapeSi1 Channel10 V56.9 nCEnhancement  
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