MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TQM025NH04CR RLG


MOSFETs 40V, 100A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 4830
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between Fri. 28 Nov to Tue. 02 Dec
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AUD 1.6708

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174 A40 V2.5 mOhmsN - Channel 3.6 V- 55 C+ 175 C136 WSMD/SMTPDFN56U - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V42 nCEnhancementAEC - Q101PerFET
IQD005N04NM6CGSCATMA1


MOSFETs TRENCH <= 40V
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Infineon 4830
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between Fri. 28 Nov to Tue. 02 Dec
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AUD 3.3438

Multiples of: 1

597 A40 V490 uOhmsN - Channel 2.8 V- 55 C+ 175 C333 WSMD/SMTPG - WHTFN - 9Reel , Cut TapeSi1 Channel- 20 V , + 20 V130 nCEnhancement OptiMOS
SWH065R03VLT


30V 58A 5.7mΩ DFN(3x3) MOSFETs ROHS
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Sam&wing 4829
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between Mon. 08 Dec to Thu. 11 Dec
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AUD 0.1198

Multiples of: 5

                   
TPM6038ND8


DFN3x3-8 MOSFETs ROHS
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TECH PUBLIC 4829
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between Mon. 08 Dec to Thu. 11 Dec
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AUD 0.3556

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AON6508-HXY


30V 150A 2m 1PCSNChannel DFN-8L(5x6) MOSFETs ROHS
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HXY MOS 4829
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between Mon. 08 Dec to Thu. 11 Dec
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AUD 0.417

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NCE65T680K


MOSFET N Trench 650V 7A (Tc) 4V @ 250uA 680 mΩ @ 3.5A,10V TO-252-2 (DPAK) RoHS
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NCE Power 4829
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between Mon. 08 Dec to Thu. 11 Dec
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AUD 0.4446

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IPD050N03LGATMA1


Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
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Infineon 4828
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between Fri. 28 Nov to Tue. 02 Dec
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AUD 0.5692

Multiples of: 1

            Optimos 3      
IPG20N10S4L35AATMA1


MOSFET MOSFET_75V 120V
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Infineon 4828
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between Fri. 28 Nov to Tue. 02 Dec
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AUD 0.901

Multiples of: 1

20 A100 V45 mOhmsN - Channel 1.1 V- 55 C+ 175 C43 WSmd/SmtTDSON - 8Cut TapeSi2 Channel16 V17.4 nCEnhancementAec - Q101 
TQM250NB06DCR RLG


MOSFET 60V 30A Dual N-Channel Power MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Taiwan Semiconductor 4828
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between Fri. 28 Nov to Tue. 02 Dec
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AUD 0.9094

Multiples of: 1

           Cut Tape       
EFC4621R-TR


MOSFET NCH 2.5V DRIVE SERIES
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ON Semiconductor 4827
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between Mon. 08 Dec to Thu. 11 Dec
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AUD 0.1528

Multiples of: 1

9 A24 V18 mOhmsN - Channel12.5 V - 55 C+ 150 C1.6 WSmd/SmtEFCP - 4ReelSi2 Channel12.5 V29 nC   
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