MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCEP025N60G


DFN-8L(5x6) MOSFETs ROHS
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NCE Power 4332
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AUD 1.2942
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IPD80R750P7ATMA1


Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO252-3
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Infineon 4329
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AUD 0.7839
Multiples of: 1

7 A800 V640 mOhmsN - Channel 2.5 V- 55 C+ 150 C51 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V17 nCEnhancement CoolMOS
HSSC3139


MOSFET P Channel -20V 650mA 1.1V @ 250uA 500mΩ @ 1A,4.5V SOT-723 RoHS
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HUASHUO 4326
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AUD 0.0496
Multiples of: 10

                   
IAUCN10S7N040ATMA1


MOSFETs MOSFET_(75V 120V(
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Infineon 4326
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AUD 1.65
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130 A100 V4 mOhmsN - Channel 3.2 V- 55 C+ 175 C142 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V39.3 nCEnhancement  
NVTFS5116PLTWG


MOSFET Single P-Channel 60V,14A,52mohm
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ON Semiconductor 4325
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AUD 0.8431
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- 14 A- 60 V52 mOhmsP - Channel   + 175 C21 WSmd/SmtWDFN - 8ReelSi1 Channel   Aec - Q101 
IQE022N06LM5CGATMA1


MOSFETs N
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Infineon 4322
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AUD 1.8224
Multiples of: 1

151 A60 V2.2 mOhmsN - Channel 2.3 V- 55 C+ 175 C100 WSMD/SMTTTFN - 9Reel , Cut TapeSi1 Channel- 20 V , + 20 V53 nCEnhancement  
WSF4N65


650V 4A 77W 2.6Ω@10V,3.5A N Channel TO-252 MOSFETs ROHS
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Winsok 4321
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AUD 0.2869
Multiples of: 5

                   
LN2604DT2AG


null 7A null DFN2020-6S MOSFETs ROHS
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Leshan 4301
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AUD 0.2043
Multiples of: 5

                   
IQE004NE1LM7ATMA1


MOSFETs N
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Infineon 4290
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AUD 1.4234
Multiples of: 1

58 A15 V570 uOhmsN - Channel 1.6 V- 55 C+ 150 C89 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 7 V , + 7 V29 nCEnhancement  
ISC046N13NM6ATMA1


MOSFETs N
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Infineon 3650
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AUD 3.4149
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142 A135 V4.6 mOhmsN - Channel 3.5 V- 55 C+ 175 C211 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V65 nCEnhancement  
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