MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSZ100N03LS G


MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
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Infineon 4274
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AUD 0.4582
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12 A30 V10 mOhmsN - Channel  - 55 C+ 150 C2.1 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V Enhancement Optimos
BSC014N06NSTATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 4273
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AUD 1.63
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100 A60 V1.45 mOhmsN - Channel 2.1 V- 55 C+ 150 C156 WSmd/SmtPG - TDSON - 8Cut TapeSi1 Channel10 V89 nCEnhancement  
FDN358P


SOT-23 MOSFETs ROHS
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TECH PUBLIC 4271
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AUD 0.0833
Multiples of: 5

                   
RRH140P03TB1


ROHM Semiconductor MOSFET Pch -30V -14A MOSFET
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ROHM 4265
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AUD 1.7403
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14 A- 30 V7.3 mOhmsP - Channel   + 150 C2 WSmd/SmtSOP - 8ReelSi      
BSS214N H6327


Infineon Technologies MOSFET N-Ch 20V 1.5A SOT-23-3
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Infineon 4265
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AUD 0.0788
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1.5 A20 V106 mOhmsN - Channel 950 mV- 55 C+ 150 C500 mWSmd/SmtSOT - 23 - 3Reel-1 Channel+/- 12 V800 pCEnhancementAec - Q101 
PSMN8R0-40BS,118


NXP Semiconductors MOSFET N-CH 40 V 7.6 MOHM MOSFET
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Nexperia 4250
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AUD 0.8849
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77 A36 V7.6 mOhmsN - Channel    86 WSmd/SmtTO - 252 - 3ReelSi1 Channel4.8 V    
AOD482


MOSFET N Trench 100V 5A 2.7V @ 250uA 37 mΩ @ 10A,10V TO-252-2 (DPAK) RoHS
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Alpha & Omega 4109
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AUD 0.432
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SI7415DN-T1-GE3


MOSFET 60V 5.7A 3.8W 65mohm @ 10V
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Vishay 3461
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AUD 1.1693
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   P - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel      Trenchfet/Powerpak
SQ9945BEY-T1_BE3


MOSFET DUAL N-CH 60V D-S
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Vishay 3171
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AUD 0.6797
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5.4 A60 V45 mOhmsN - Channel - 20 V , + 20 V12 n C- 55 C+ 175 CSMD/SMTSO - 8Trenchfet , Cut Tape , Reel , ReelSi2 Channel45 mOhms1.5 V4 WEnhancement 
PSMN0R7-25YLDX


MOSFET PSMN0R7-25YLD/4 LEADS/REEL 7
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Nexperia 1765
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AUD 1.7403
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300 A25 V570 uOhmsN - Channel 1.2 V- 55 C+ 150 C158 WSmd/SmtLFPAK56 - 4Cut TapeSi1 Channel10 V110.2 nCEnhancement  
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