MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ZXMS6008FFQ-7


MOSFETs Low Side IntelliFET SOT23F T&R 3K
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 4764
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AUD 0.3021
Multiples of: 1

1.1 A60 V700 mOhmsN - Channel 700 mV- 40 C+ 125 C1.5 WSMD/SMTSOT23F - 3Reel , Cut Tape 1 Channel  Enhancement  
NCE0224AK


TO-252 MOSFETs ROHS
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NCE Power 4764
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AUD 0.5158
Multiples of: 1

                   
AP2317QD


20V 12A 17mΩ@4.5V,6A 15W 2 P-Channel PDFN-8L(3.3x3.3) MOSFETs ROHS
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Quan Li 4762
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AUD 0.3421
Multiples of: 5

                   
IAUCN04S7L006ATMA1


MOSFETs N
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Infineon 4762
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AUD 1.3479
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380 A40 V600 uOhmsN - Channel 1.5 V- 55 C+ 175 C164 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 16 V , + 16 V95 nCEnhancement  
RD3G03BBGTL1


MOSFETs RD3G03BBG is a power MOSFET with low-on resistance and High power package, suitable for switching.
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ROHM 4760
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AUD 1.2833
Multiples of: 1

65 A40 V6.5 mOhmsN - Channel 2.5 V- 55 C+ 150 C50 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , + 20 V18.2 nCEnhancement  
KIRLML5203TRPBF


30V 3A 98Ω@10V,3A 1.25W P Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics 4758
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AUD 0.0525
Multiples of: 10

                   
65N06


60V 65A 6.8mΩ 4V N Channel TO252 MOSFETs ROHS
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HL 4757
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AUD 0.1855
Multiples of: 5

                   
IRFR110PBF


N-Channel 100 V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
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Vishay 2947
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AUD 0.55
Multiples of: 1

   N Channel       Tube       
SI8487DB-T1-E1


MOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6
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Vishay 856
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between Mon. 24 Nov to Fri. 28 Nov Calender.png

AUD 0.5156
Multiples of: 1

7.7 A30 V25 mOhmsP - Channel 1.2 V- 55 C+ 150 C2.7 WSmd/SmtMICRO - FOOT - 4Cut TapeSi1 Channel12 V80 nCEnhancement Trenchfet
150N03NF


30V 150A 1.5m@10V,30A 87W 2.4V@250uA 1PCSNChannel PDFN-8(5x6) MOSFETs ROHS
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GOODWORK 0
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AUD 0.4503
Multiples of: 1

                   
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