MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TQM033NB04CR RLG


MOSFET 40V 121A Single N-Channel Power MOSFET
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Taiwan Semiconductor 4235
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AUD 1.0615
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IPD60R2K0PFD7SAUMA1


MOSFET CONSUMER
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Infineon 4233
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AUD 0.4089
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SI2324DS-T1-BE3


N-Channel 100V 1.6A (Ta), 2.3A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 4232
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AUD 0.2279
Multiples of: 3000

          TO - 236 - 3 , SC - 59 , SOT - 23 - 3Tape And ReelMosfet (Metal Oxide)      
BML6401


12V 4.3A 50mΩ@4.5V,4.3A 1.3W 950mV@250uA 125pF@10V P Channel 830pF@10V +150℃@(Tj) SOT-23 MOSFETs ROHS
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Bourne 4230
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AUD 0.0505
Multiples of: 10

                   
ZVN4306A


MOSFET N-Chnl 60V
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Diodes Incorporated 4222
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AUD 0.9687
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1.1 A60 V450 mOhmsN - Channel 1.3 V- 55 C+ 150 C850 mWThrough HoleTO - 92 - 3BulkSi1 Channel5 V Enhancement  
IPB011N04N G


Infineon Technologies MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS 3
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Infineon 4031
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AUD 2.5448
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180 A40 V1.1 mOhmsN - Channel20 V - 55 C+ 175 C250 WSmd/SmtD2PAK - 7ReelSi1 Channel20 V Enhancement Optimos
MIC94051YM4-TR


MOSFET 1.8V-rated reverse-blocking PFET
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Microchip 3528
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AUD 0.747
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- 1.8 A- 6 V160 mOhmsP - Channel 500 mV- 40 C+ 150 C568 mWSmd/SmtSOT - 143 - 4ReelSi 1.8 V Enhancement  
IRF1407PBF


Transistor: N-MOSFET; unipolar; 75V; 130A; 330W; TO220AB
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Infineon 3252
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AUD 0.8293
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            Hexfet®      
FH25P03G6


DFN-8-EP(3.3x3.3) MOSFETs ROHS
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Xinfeihong 2706
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AUD 0.0949
Multiples of: 5

                   
SQ2308CES-T1_GE3-HXY


60V 3A 80m 1PCSNChannel SOT-23 MOSFETs ROHS
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HXY MOS 2313
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AUD 0.1543
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