MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CJAB60N03


MOSFET PDFNWB3.3x3.3-8L RoHS
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Changjing Electronics Technology 4301
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AUD 0.2734
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EFC4C012NLTDG


MOSFET NCH 30V 30A WLCSP6 DUAL N-CHAN
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ON Semiconductor 4297
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AUD 1.691
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19 A30 V5 mOhms , 5 mOhmsN - Channel 1.3 V + 150 C2.5 WSmd/SmtWLCSP - 6Cut TapeSi2 Channel20 V18 nC , 18 nCEnhancement  
BSC067N06LS3GATMA1


Infineon Technologies MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
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Infineon 4295
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AUD 0.7454
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50 A60 V6.7 mOhmsN - Channel 1.2 V- 55 C+ 150 C69 WSmd/SmtTDSON - 8ReelSi1 Channel20 V67 nCEnhancement Optimos
DMG3406L-7


MOSFET 30V N-Ch Enh Mode 50mOhm 10V 3.6A
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Diodes Incorporated 4294
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AUD 0.1275
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3.6 A30 V50 mOhmsN - Channel 1 V- 55 C+ 150 C770 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V11.2 nCEnhancement  
IQEH54NE2LM7UCGATMA1


MOSFETs OptiMOS 7 Power -Transistor, 25 V
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Infineon 4293
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AUD 1.5636
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406 A25 V540 uOhmsN - Channel 2 V- 55 C+ 175 C150 WSMD/SMT Reel , Cut TapeSi1 Channel16 V27 nCEnhancement OptiMOS
BSC026N08NS5ATMA1


Transistor: N-MOSFET; unipolar; 80V; 100A; 156W; PG-TDSON-8
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Infineon 4291
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AUD 2.0194
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            Optimos 5      
ZXMP10A18KTC


Diodes Incorporated MOSFET P-Ch 100 Volt 5.2A
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Diodes Incorporated 4269
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AUD 0.6776
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- 3.8 A- 100 V190 mOhmsP - Channel20 V- 4 V- 55 C+ 150 C10.2 WSmd/SmtDPAK - 3ReelSi1 Channel- 10 V26.9 nCEnhancement  
FDS6681Z


Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
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ON Semiconductor 3193
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AUD 1.183
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   P Channel               
SP010N04BGNK


PDFN-8L(5x6) MOSFETs ROHS
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Siliup 3052
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AUD 0.4008
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AON5820


MOSFET 2 N Channel（Double）Common Drain 20V 10A 1V @ 250uA 9.5 mΩ @ 10A,4.5V DFN 2x5 RoHS
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Alpha & Omega 58
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AUD 0.3814
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