MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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First...501502503504505...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ISC130N20NM6ATMA1


MOSFETs N
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Infineon 4187
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AUD 4.9292
Multiples of: 1

88 A200 V13 mOhmsN - Channel 4.5 V- 55 C+ 175 C242 WSMD/SMTTSON - 8 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V39 nCEnhancement  
TSM900N06CW RPG


MOSFET 60V 11A N Channel Power Mosfet
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Taiwan Semiconductor 4179
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AUD 0.2052
Multiples of: 1

11 A60 V76 mOhmsN - Channel 1.2 V-+ 150 C4.7 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel10 V9.3 nCEnhancement  
ZXMP6A17E6QTA


Diodes Incorporated MOSFET 60V P-Ch Enh Mode 1.1W 3A 637pF 17.7nC
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Diodes Incorporated 4176
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AUD 0.1588
Multiples of: 1

- 3 A- 60 V130 mOhmsP - channel - 3 V- 55 C+ 150 C1.92 WSmd/smtSOT - 26 - 6Reel  20 V17.7 nCEnhancement  
PT3400


SOT-23 MOSFETs ROHS
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PUOLOP 4176
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AUD 0.0353
Multiples of: 10

                   
HYG025N06LS1C2


60V 170A 2.1mΩ@10V,20A 130W 2.1V@250uA 10.2pF@25V N Channel 3.915nF@25V 28.2nC@10V +175℃@(Tj) PDFN5x6-8L MOSFETs ROHS
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HuaYi 4175
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AUD 0.5236
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DMN6013LFGQ-7


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 4173
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AUD 0.6095
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45 A60 V9.3 mOhmsN - Channel 1 V- 55 C+ 150 C40 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel20 V55.4 nCEnhancementAec - Q101 
ZXMS6006SGTA


MOSFET 60V N-CH INTELLIFET 100mOhm 2.8A 480mJ
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Diodes Incorporated 3695
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AUD 0.6584
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2.8 A60 V75 mOhmsN - Channel 700 mV- 40 C+ 125 C1.6 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel5 V Enhancement Intellifet
PXN4R7-30QLJ


MOSFET MOSFET DISCRETES
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Nexperia 3687
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AUD 0.3661
Multiples of: 1

15 A30 V4.7 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.8 WSMD/SMTMLPAK33 - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V14.7 nCEnhancement  
DMN30H4D0LFDE-7


MOSFET N-Ch Enh Mode FET 300Vds 20Vgs FET
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Diodes Incorporated 3405
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AUD 0.2807
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550 mA300 V2.3 OhmsN - Channel 1 V- 55 C+ 150 C1.98 WSmd/SmtU - DFN2020 - E - 6Cut TapeSi1 Channel20 V7.6 nCEnhancement  
TPH2R306NH,L1Q


N-Channel 60 V 60A (Tc) 1.6W (Ta), 78W (Tc) Surface Mount 8-SOP Advance (5x5)
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Toshiba 501
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AUD 0.9359
Multiples of: 1

130 A60 V1.9 mOhmsN - Channel 2 v to 4 V- 55 C+ 150 C78 WSmd/SmtSOP - 8ReelSi1 Channel20 V72 nC  Umosviii
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First...501502503504505...

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