MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIS407ADN-T1-GE3


P-Channel 20 V 18A (Tc) 3.7W (Ta), 39.1W (Tc) Surface Mount PowerPAK® 1212-8
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Vishay 4744
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AUD 0.5738
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18 A20 V9 mOhmsP - Channel 400 mV- 55 C+ 150 C39.1 WSmd/SmtPOWERPAK - 1212 - 8ReelSi1 Channel- 4.5 V112 nCEnhancement Trenchfet
SI4436DY-T1-E3


MOSFET 60V 8.0A 5.0W 36mohm @ 10V
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Vishay 4744
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AUD 0.6932
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   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReelSi     Trenchfet
SIR122LDP-T1-RE3


MOSFETs N-CHANNEL 80-V (D-S)
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Vishay 4744
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AUD 0.7787
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62.3 A80 V7.35 mOhmsN - Channel 2.5 V- 55 C+ 150 C SMD/SMTSO - 8 Si1 Channel- 20 V , + 20 V34.6 nCEnhancement  
FDT3612(UMW)


SOT-223 MOSFETs ROHS
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Youtai 4743
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AUD 0.0902
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ASDM30DN30E-R


30V 30A 26W 15mΩ@10V,15A 2.5V@250uA 108pF@15V 2 N-Channel 896pF@15V 9.82nC@4.5V -55℃~+150℃@(Tj) PDFN3.3x3.3-8 MOSFETs ROHS
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Ascend 4743
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AUD 0.163
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BLM3400


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 59 mΩ @ 4A,2.5V SOT-23 (SOT-23-3) RoHS
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Belling 4742
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AUD 0.0584
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TSM051N04LCP ROG


MOSFET MOSFET, Single, N-Ch Trench, 40V, 96A
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Taiwan Semiconductor 4742
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AUD 1.8615
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96 A40 V4.3 mOhmsN - Channel 1.2 V- 55 C+ 150 C89 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V44.5 nCEnhancement  
WST2005


20V 1.6A 145mΩ@4.5V,1A 350mW P Channel SOT-323 MOSFETs ROHS
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Winsok 4741
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AUD 0.0777
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RQ3G100GNTB


ROHM Semiconductor MOSFET
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ROHM 4703
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AUD 0.2689
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10 A40 V11 mOhmsN - Channel 1.2 V- 55 C+ 150 C2 WSmd/SmtH SMT - 8ReelSi1 Channel20 V8.4 nCEnhancement  
IRFP4568PBF


MOSFET N Trench 150V 171A 5V @ 250uA 5.9 mΩ @ 103A,10V TO-247 (AC) RoHS
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Infineon 4204
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AUD 2.0899
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171 A150 V4.8 mOhmsN - Channel    517 WThrough HoleTO - 247ACTubeSi1 Channel30 V151 nC   
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