MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HP8KE6TB1


MOSFETs 100V 17A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KE6 is a low on-resistance MOSFET ideal for switching applications.
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ROHM 4736
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AUD 1.1105
Multiples of: 1

17 A100 V73 mOhmsN - Channel 2.5 V- 55 C+ 150 C21 WSMD/SMTHSOP - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V6.7 nCEnhancement  
AP85N04G


40V 65A 5mΩ@10V,30A 48W N Channel TDSON-8(5.2x5.9) MOSFETs ROHS
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Quan Li 4735
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AUD 0.5338
Multiples of: 5

                   
HP8MC5TB1


MOSFETs 60V 12A, Dual Nch+Pch, HSOP8, Power MOSFET: HP8MC5 is a low on-resistance MOSFET ideal for switching applications.
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ROHM 4735
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AUD 1.0302
Multiples of: 1

12 A60 V90 mOhms , 96 mOhmsN - Channel, P - Channel 2.5 V- 55 C+ 150 C20 WSMD/SMTHSOP - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V3.1 nC , 17.3 nCEnhancement  
BSC093N15NS5


150V 87A 139W 9.3mO@10V,44A N Channel TDSON-8(6x5) MOSFETs ROHS
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Infineon 4735
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AUD 1.4087
Multiples of: 1

                   
CSD19533Q5A


MOSFET 100V 7.8mOhm N-CH Pwr MOSFET
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Texas Instruments 4734
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AUD 1.026
Multiples of: 1

75 A100 V8.7 mOhmsN - Channel20 V2.8 V- 55 C+ 150 C3.2 WSmd/SmtVSON - 8 FETReelSi1 Channel10 V27 nCEnhancement Nexfet
DMP2900UFBQ-7B


MOSFETs MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 10K
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Diodes Incorporated 4733
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AUD 0.0768
Multiples of: 1

990 mA20 V1.5 OhmsP - Channel 1 V- 55 C+ 150 C1.11 WSMD/SMTX1 - DFN1006 - 3Reel , Cut TapeSi1 Channel- 6 V , + 6 V700 pCEnhancement  
BSC026N02KS G


Infineon Technologies MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
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Infineon 4733
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AUD 1.2833
Multiples of: 1

25 A20 V2.6 mOhmsN - Channel12 V700 mV- 55 C+ 150 C2.8 WSmd/SmtTDSON - 8ReelSi1 Channel12 V52.7 nCEnhancement Optimos
HSU4016


MOSFET N Channel 40V 75A 2.5V @ 250uA 6.5mO @ 15A,10V TO-252 RoHS
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HUASHUO 4732
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AUD 0.3136
Multiples of: 5

                   
DMN4026SK3-13


Diodes Incorporated MOSFET 40V N-Ch Enh FET 20Vgss 1.6W 1181pF
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Diodes Incorporated 4732
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AUD 0.3929
Multiples of: 1

28 A40 V20 mOhmsN - Channel 1 V- 55 C+ 150 C3.4 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V9.6 nCEnhancement  
IPD70N10S3-12


Infineon Technologies MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T
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Infineon 4540
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AUD 1.7984
Multiples of: 1

70 A100 V11.1 mOhmsN - Channel  - 55 C+ 175 C125 WSmd/SmtDPAK - 3ReelSi1 Channel20 V51 nCEnhancementAec - Q101Optimos
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