MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NDS7002A-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23-3L MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ElecSuper 4209
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AUD 0.0167
Multiples of: 20

                   
DI105N04PQ-AQ


MOSFETs MOSFET, PowerQFN 5x6, 40V, 105A, 150C, N, AEC-Q101
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Diotec 4207
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AUD 0.5664
Multiples of: 1

105 A40 V2.6 mOhmsN - Channel 1.4 V- 55 C+ 150 C83 WSMD/SMTQFN - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V23 nCEnhancementAEC - Q101 
DMGD7N45SSD-13


MOSFET MOSFET BVDSS: 251V-500V
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Diodes Incorporated 4203
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AUD 1.1911
Multiples of: 1

500 mA450 V4 OhmsN - Channel 3.5 V- 55 C+ 150 C1.64 WSMD/SMTSOIC - 8Reel , Cut TapeSi2 Channel- 30 V , 30 V6.9 nCEnhancement  
BSC060N10NS3 G


MOSFET OptiMOS2 PWR Transistor N-CH
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Infineon 4176
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AUD 1.3134
Multiples of: 1

90 A100 V5.3 mOhmsN - Channel 2 V- 55 C+ 150 C125 WSmd/SmtTDSONReelSi1 Channel20 V68 nCEnhancement Optimos
NVTFS5116PL(XBLW)


60V 20A 1 Piece P-Channel DFN-8L(3x3) MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

XBLW 4171
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AUD 0.242
Multiples of: 5

                   
NCEP3045GU


DFN-8(4.9x5.7) MOSFETs ROHS
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NCE Power 4151
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AUD 0.3278
Multiples of: 5

                   
PSMN069-100YS,115


MOSFET Single NChannel 100V 68A 56W 130mOhms
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Nexperia 3966
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AUD 0.3596
Multiples of: 1

12 A90 V130 mOhmsN - Channel 3 V  56 WSmd/SmtSOT - 669ReelSi1 Channel20 V    
AOD444


MOSFET N Trench 60V 4A 3V @ 250uA 60 mΩ @ 12A,10V TO-252-2 (DPAK) RoHS
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Alpha & Omega 3923
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AUD 0.2964
Multiples of: 5

                   
IPN60R2K1CEATMA1


Transistor: N-MOSFET; unipolar; 600V; 2.4A; 5W; PG-SOT223
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Infineon 3724
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AUD 0.2616
Multiples of: 1

            Coolmos Ce      
IQD020N10NM5CGATMA1


MOSFETs N
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Infineon 3039
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AUD 3.5134
Multiples of: 1

273 A100 V2.05 mOhmsN - Channel 3.8 V- 55 C+ 175 C333 WSMD/SMTTTFN - 9Reel , Cut TapeSi1 Channel- 20 V , + 20 V107 nCEnhancement OptiMOS
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