MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPCA8120,L1Q


MOSFETs
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 4717
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AUD 0.66
Multiples of: 1

45 A30 V4 mOhmsP - Channel 2 V + 150 C45 WSMD/SMTSOP - 8 Si1 Channel- 25 V , + 20 V190 nCEnhancement  
IPG20N10S4L-22A


MOSFET MOSFET_75V 120V
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Infineon 4716
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AUD 1.21
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20 A100 V20 mOhms , 20 mOhmsN - Channel 1.1 V- 55 C+ 175 C60 WSmd/SmtTDSON - 8Cut TapeSi2 Channel16 V27 nC , 27 nCEnhancementAec - Q101 
BSF134N10NJ3 G


Infineon Technologies MOSFET N-Ch 100V 40A CanPAK3 SJ OptiMOS 3
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Infineon 4716
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AUD 1.775
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40 A100 V13.4 mOhmsN - Channel     Smd/SmtWDSON - 2ReelSi1 Channel    Optimos
IRLML9301TRPBF-VB


30V 5.6A P Channel SOT-23 MOSFETs ROHS
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VBsemi Elec 4715
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AUD 0.0829
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STR2N2VH5


SOT-23 MOSFETs ROHS
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TECH PUBLIC 4714
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AUD 0.0812
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NTTFS5826NL(XBLW)


60V 30A 1 N-Channel DFN-8L(3x3) MOSFETs ROHS
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XBLW 4714
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AUD 0.1551
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FH3055GS


30V PDFN-8L(5x6) MOSFETs ROHS
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Xinfeihong 4714
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AUD 0.1562
Multiples of: 5

                   
SSM3J143TU,LXHF


MOSFET SMOS P-ch Vdss:-20V Vgss:-8/+6V Id:-5.5A
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Toshiba 4714
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AUD 0.2381
Multiples of: 1

5.5 A20 V29.8 mOhmsP - Channel 1 V-+ 150 C1 WSMD/SMTUFM - 3Cut Tape , ReelSi1 Channel- 8 V , + 6 V12.8 nCEnhancementAEC - Q101 
R6004PND3FRATL


N-Channel 600V 4A (Tc) 65W (Tc) Surface Mount TO-252
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ROHM 4713
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AUD 1.8312
Multiples of: 2500

4 A600 V1.8 OhmsN - Channel 4.5 V-+ 150 C65 WSMD/SMTTO - 252 - 3/2Reel , Cut TapeSi1 Channel- 25 V , + 25 V11 nCEnhancementAEC - Q101 
IQD020N10NM5CGATMA1


MOSFETs N
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Infineon 4713
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AUD 3.9877
Multiples of: 1

273 A100 V2.05 mOhmsN - Channel 3.8 V- 55 C+ 175 C333 WSMD/SMTTTFN - 9Reel , Cut TapeSi1 Channel- 20 V , + 20 V107 nCEnhancement OptiMOS
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