MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RD3U080AAFRATL


MOSFET MOSFET
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ROHM 4105
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AUD 1.6374
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8 A250 V300 mOhmsN - Channel 5 V- 55 C+ 150 C85 WSMD/SMTDPAK - 3Reel , Cut TapeSi1 Channel- 30 V , + 30 V25 nCEnhancementAEC - Q101 
FH3060G6


DFN-8-EP(3.3x3.3) MOSFETs ROHS
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Xinfeihong 4103
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AUD 0.1132
Multiples of: 5

                   
BSC0901NS


MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
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Infineon 4103
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AUD 0.4036
Multiples of: 5

100 A30 V1.6 mOhmsN - Channel 1.2 V- 55 C+ 150 C69 WSmd/SmtPG - TDSON - 8ReelSi1 Channel20 V44 nCEnhancement Optimos
IRFR48ZTRLPBF


N-Channel 55 V 42A (Tc) 91W (Tc) Surface Mount D-PAK (TO-252AA)
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Infineon 4103
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AUD 0.9637
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62 A55 V11 mOhmsN - Channel 4 V- 55 C+ 175 C91 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V40 nCEnhancement  
FDC6401N


SOT-163 MOSFETs ROHS
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TECH PUBLIC 4102
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AUD 0.0997
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DMC3028LSD-13


SO-8 MOSFETs ROHS
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Diodes Incorporated 4102
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AUD 0.2955
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7.1 A , 7.4 A30 V45 mOhms , 41 mOhmsN - Channel, P - Channel  - 55 C+ 150 C1.3 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V5.2 nC , 16.4 nC   
VBA1203M


MOSFET N Channel 200V 3A 4V @ 250uA 260mO @ 3A,10V SO-8 RoHS
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VBsemi Elec 4102
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AUD 0.4835
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WST3414


MOSFET N Trench 20V 6A (Tc) 1V @ 250uA 30 mΩ @ 4A,4.5V SOT-23 (SOT-23-3) RoHS
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Winsok 4098
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AUD 0.0575
Multiples of: 10

                   
IPD30N06S2L13ATMA4


MOSFET N-CHANNEL_55/60V
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Infineon 4096
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AUD 0.9867
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30 A55 V13 mOhmsN - Channel 1.2 V- 55 C+ 175 C136 WSmd/SmtTO - 252 - 3ReelSi1 Channel10 V54 nCEnhancementAec - Q101 
BSO080P03S H


MOSFET P-Ch -30V -14.9A DSO-8 OptiMOS P
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Infineon 2950
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AUD 1.1427
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14.9 A30 V8 mOhmsP - Channel  - 55 C+ 150 C2.5 WSmd/SmtPG - DSO - 8ReelSi1 Channel25 V- 102 nCEnhancement Optimos
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