MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
R6004END3TL1


N-Channel 600 V 4A (Tc) 59W (Tc) Surface Mount TO-252
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ROHM 4220
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AUD 1.224
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4 A600 V980 mOhmsN - Channel 2 V- 55 C+ 150 C59 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V15 nCEnhancement  
FDMC8878


MOSFET 30V N-CH Power TrenchAr MOSFET
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ON Semiconductor 4219
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AUD 0.9183
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16.5 A30 V9.6 mOhmsn - channel  - 55 C+ 150 C31 Wsmd/smtPOWER 33Reelsi1 channel10 V18 nCenhancement powertrench
90P03F


PDFN-8L(5x6) MOSFETs ROHS
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HL 4214
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AUD 0.2265
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IQD063N15NM5SCATMA1


MOSFETs TRENCH >=100V
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Infineon 4214
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AUD 4.3672
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151 A150 V6.32 mOhmsN - Channel 4.6 V- 55 C+ 175 C333 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V48 nCEnhancement OptiMOS
IAUZN10S7L289ATMA1


MOSFETs OptiMOS 7 Power-Transistor
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Infineon 4210
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AUD 0.5106
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27 A100 V28.9 mOhmsN - Channel 2 V- 55 C+ 175 C45 WSMD/SMTPG - TDSON - 8Reel , Cut TapeSi1 Channel16 V10.9 nCEnhancement OptiMOS
SSM3J332R,LF(T


Transistor: P-MOSFET; unipolar; -30V; -6A; 1W; SOT23F
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Toshiba 4195
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AUD 0.1609
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IRFR9220TRPBF


MOSFET P Trench 200V 3.6A 4V @ 250uA 1.5 Ω @ 2.2A,10V TO-252-2 (DPAK) RoHS
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Infineon 4163
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AUD 0.9091
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WSD3072DN33


DFN-8L(3x3) MOSFETs ROHS
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Winsok 3618
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AUD 0.1094
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STF18N60M2


MOSFET N-CH 600V 0.255Ohm 13A MDmesh II
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STMicroelectronics 3302
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AUD 0.7806
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13 A600 V255 mOhmsN - Channel25 V3 V- 55 C+ 150 C25 WThrough HoleTO - 220FP - 3Tube   21.5 nC   
BSZ067N06LS3GATMA1


Transistor: N-MOSFET; unipolar; 60V; 20A; 69W; PG-TSDSON-8
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Infineon 1302
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AUD 0.8472
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