MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO4411


MOSFET P Trench 30V 8A 2.4V @ 250uA 32 mΩ @ 8A,10V SOIC-8_150mil RoHS
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Alpha & Omega 4141
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AUD 0.1628
Multiples of: 5

           -       
WSF3013B


TO-252-4 MOSFETs ROHS
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Winsok 4125
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AUD 0.2237
Multiples of: 1

                   
DMN1004UFV-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 4124
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AUD 0.3021
Multiples of: 1

70 A12 V2.8 mOhmsN - Channel 300 mV- 55 C+ 150 C1.9 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel8 V47 nCEnhancement  
DMC2700UDMQ-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 4123
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AUD 0.1625
Multiples of: 1

1.34 A , 1.14 A20 V300 mOhms , 500 mOhmsN - Channel, P - Channel 500 mV- 55 C+ 150 C1.12 W   Si2 Channel4.5 V736.6 pC , 622.4 pCEnhancementAec - Q101 
IRLU3636PBF


Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; IPAK
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Infineon 4118
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AUD 1.5205
Multiples of: 1

99 A60 V8.3 mOhmsN - Channel    143 WThrough HoleIPAKTubeSi1 Channel16 V33 nC   
ISC019N04NM5ATMA1


40V 1.9mO@50A,10V N Channel TDSON-8-FL MOSFETs ROHS
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Infineon 4111
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AUD 0.5336
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170 A40 V1.9 mOhmsN - Channel 2.2 V- 55 C+ 175 C100 WSMD/SMTTDSON - FL - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V42 nCEnhancement  
FDMC7692S


MOSFET 30V N-Channel PowerTrench SyncFET
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ON Semiconductor 4110
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AUD 0.3489
Multiples of: 1

18 A30 V10.8 mOhmsN - Channel  - 55 C+ 150 C2.3 WSmd/SmtMLP - 8ReelSi1 Channel20 V8 nC  Powertrench Syncfet
NTMFS5C410NT1G


MOSFET T6D3F 40V NFET
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ON Semiconductor 4078
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AUD 0.9877
Multiples of: 1

300 A40 V760 mOhmsN - Channel 2.5 V- 55 C+ 175 C166 WSmd/SmtSO - FL - 8Cut TapeSi1 Channel20 V86 nCEnhancement  
BSS138


MOSFET N Trench 50V 300mA 1.5V @ 250uA 2.5 Ω @ 500mA,10V SOT-23 RoHS
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Youtai 3298
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AUD 0.0099
Multiples of: 50

                   
SQ2301ES-T1_BE3


MOSFET P-CHANNEL 20V D-S
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Vishay 1204
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AUD 0.2381
Multiples of: 1

3.9 A20 V120 mOhmsP - Channel 1.5 V- 55 C+ 175 C3 WSMD/SMTSOT - 23 - 3Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 8 V , + 8 V5 nCEnhancement TrenchFET
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