MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPB60R299CPAATMA1


MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CPA
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Infineon 9570
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AUD 3.1002
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11 A600 V270 mOhmsN - Channel 2.5 V- 40 C+ 150 C96 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V29 nCEnhancement Coolmos
DMT36M1LPS-13


MOSFET MOSFETBVDSS: 25V-30V
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Diodes Incorporated 4721
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AUD 0.2619
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65 A30 V4.8 mOhmsN - Channel 1 V- 55 C+ 150 C42 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel20 V16.7 nCEnhancement  
RQ3E120BNTB


N-Channel 30 V 12A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
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ROHM 4720
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AUD 0.3003
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12 A30 V6.6 mOhmsN - Channel 2.5 V  2 WSmd/SmtH SMT - 8Tape And ReelSi1 Channel20 V29 nCEnhancement  
DMTH4008LPS-13


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 4719
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AUD 0.3574
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64.8 A40 V8.8 mOhmsN - Channel 1 V- 55 C+ 175 C55.5 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel20 V15.3 nCEnhancement  
GT090N06D52


60V 40A 62W 9m@10V 2.5V@250uA 2 N-Channel DFN(5x6) MOSFETs ROHS
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GOFORD 4719
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AUD 0.4445
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Hot BSC0923NDI


MOSFET N-Ch 30V30V 40A40A TISON-8
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Infineon 4719
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AUD 0.6827
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40 A30 V3.8 mOhms , 2.1 mOhmsN - Channel 1.2 V- 55 C+ 150 C2.5 WSmd/SmtTISON - 8Cut TapeSi2 Channel20 V10 nC , 18.4 nCEnhancement Optimos
IQE004NE1LM7ATMA1


MOSFETs N
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Infineon 4719
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AUD 1.776
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58 A15 V570 uOhmsN - Channel 1.6 V- 55 C+ 150 C89 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 7 V , + 7 V29 nCEnhancement  
TPCA8123,L1Q


MOSFET P Trench 60V 50A 3V @ 1mA 14.9 mΩ @ 25A,6V SOP Advance RoHS
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Toshiba 4719
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AUD 5.2365
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BSP88H6327XTSA1


Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
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Infineon 4718
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AUD 0.2514
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            Sipmos      
TSM110NB04LDCR RLG


MOSFET MOSFET 40V 48A 11mohms
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Taiwan Semiconductor 4718
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AUD 0.8495
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