MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCE55P15K


MOSFET P Trench 55V 15A 3.5V @ 250uA 75 mΩ @ 5A,10V TO-252-2 (DPAK) RoHS
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NCE Power 6993
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AUD 0.2069
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FQD7P20TM


200V 10A P Channel TO-252 MOSFETs ROHS
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Tokmas 4142
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AUD 0.5431
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WSD40P10DN56


100V 30A 78mΩ@10V,10A 54W P Channel DFN-8(4.9x5.8) MOSFETs ROHS
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Winsok 4142
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AUD 0.5849
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IRFR120TRPBF-BE3


MOSFET 100V N-CH
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Vishay 4142
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AUD 1.1462
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7.7 A100 V270 mOhmsN - Channel 4 V- 55 C+ 150 C42 WSMD/SMTTO - 252 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V16 nCEnhancement  
YJQ30N03A


30V 30A 5.8mΩ@10V,15A 21W N Channel DFN-8(3.3x3.3) MOSFETs ROHS
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Yangjie 4140
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AUD 0.1412
Multiples of: 5

                   
PJS6601_S1_00001


MOSFET /SC1/TRR/7"/HF/3K/SOT23-6L/MOS/SOT/NFET-20TLNP/NF20TL-QI12/PJ///
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Panjit 4136
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AUD 0.197
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           Cut Tape       
IRF60B217


MOSFET 60V, 60A, 9.0 mOhm 44 nC Qg
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Infineon 4134
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AUD 0.9494
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60 A60 V7.3 mOhmsn - channel 2.1 V- 55 C+ 175 C83 Wthrough holeTO - 220 - 3Tubesi1 channel+/- 20 V44 nCenhancement strongirfet
2N7000


MOSFET N-CHANNEL 60V 200mA
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NTE 4131
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AUD 0.668
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   N - Channel  - 55 C150 C Through Hole Bulk       
DMN3020UTS-13


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 4127
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AUD 0.261
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15 A30 V15 mOhmsN - Channel 400 mV- 55 C+ 150 C1.4 WSmd/SmtTSSOP - 8Cut TapeSi1 Channel4.5 V15 nCEnhancement  
BSC0921NDI


Infineon Technologies MOSFET N-Ch 30V,30V 40A,40A TISON-8
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Infineon 4100
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AUD 0.921
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40 A30 V3.9 mOhms , 1.2 mOhmsN - Channel 1.2 V- 55 C+ 150 C2.5 WSmd/SmtTISON - 8ReelSi1 Channel20 V8.9 nC , 33 nCEnhancement Optimos
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