MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot IRFR120PBF


MOSFET N-Chan 100V 7.7 Amp
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Vishay 4211
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AUD 0.5207
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         Smd/SmtTO - 252 - 3TubeSi      
BSC118N10NS G


Infineon Technologies MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
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Infineon 4203
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AUD 0.8324
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11 A100 V11.8 mOhmsN - Channel20 V - 55 C+ 150 C114 WSmd/SmtTDSON - 8ReelSi1 Channel20 V Enhancement Optimos
IQD063N15NM5CGATMA1


MOSFETs N
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Infineon 4201
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AUD 4.1354
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148 A150 V6.32 OhmsN - Channel 3 V- 55 C+ 150 C278 WSMD/SMTTTFN - 9Reel , Cut TapeSi1 Channel- 10 V , + 10 V48 nCEnhancement  
IQD020N10NM5ATMA1


MOSFETs N
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Infineon 4198
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AUD 3.84
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276 A100 V2.05 mOhmsN - Channel 3.8 V- 55 C+ 175 C333 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V107 nCEnhancement  
BSC084P03NS3E G


Infineon Technologies MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3
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Infineon 4197
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AUD 0.8652
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78.6 A30 V8.4 mOhmsp - channel  - 55 C+ 150 C69 Wsmd/smtTDSON - 8Reelsi1 channel25 V43.4 nC  optimos
AOD4130


TO-252 MOSFETs ROHS
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Youtai 4195
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AUD 0.1668
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IRFU210PBF


N-Channel 200 V 2.6A (Tc) 2.5W (Ta), 25W (Tc) Through Hole TO-251AA
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Vishay 4194
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AUD 0.4301
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2.6 A200 V1.5 OhmsN - Channel 2 V- 55 C+ 150 C25 WThrough HoleIPAKTubeSi1 Channel10 V8.2 nCEnhancement  
1N65G


MOSFET N Trench 650V 1A (Tc) 4V @ 250uA 11 Ω @ 500mA,10V SOT-223 RoHS
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Youtai 4192
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AUD 0.1022
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BSS83PH6327XT


MOSFET SIPMOS Small Signal Transistor
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Infineon 4190
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AUD 0.1442
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330 mA60 V1.4 OhmsP - Channel 2 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V3.57 nCEnhancementAec - Q101 
SI4435FDY-T1-GE3


MOSFET -30V Vds 20V Vgs SO-8
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Vishay 1749
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AUD 0.3659
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12.6 A30 V30 mOhmsP - Channel 2.2 V- 55 C+ 150 C4.8 WSmd/SmtSO - 8Cut TapeSi1 Channel20 V13.5 nCEnhancement  
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