MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
JSM9435


30V 5.3A 51mΩ@10V,5.3A 2W 3V@250uA 80pF@15V P Channel 845pF@15V 22nC@10V -55℃~+150℃@(Tj) SOP-8 MOSFETs ROHS
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JSMSEMI 10379
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AUD 0.0377
Multiples of: 10

                   
EFC6612R-TF


ON Semiconductor MOSFET NCHNCH 23A 20V 4.4M OHM
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ON Semiconductor 4703
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AUD 0.683
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 20 V4.2 mOhms , 4.2 mOhmsn - channel 500 mV- 55 C+ 150 C2.5 Wsmd/smtCSP - 6Reelsi2 channel12 V27 nC , 27 nCenhancement  
SUD23N06-31L-T4BE3


N-Channel 60V 9.1A (Ta), 21.4A (Tc) 5.7W (Ta), 31.25W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 4703
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AUD 0.8299
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23 A60 V31 mOhmsN - Channel 3 V- 55 C+ 175 C100 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V11 nCEnhancement  
ZVNL110ASTZ


MOSFET N-Chnl 100V
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Diodes Incorporated 4699
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AUD 0.5139
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320 mA100 V3 OhmsN - Channel 750 mV- 55 C+ 150 C700 mWThrough HoleTO - 92BulkSi1 Channel10 V Enhancement  
IRFPF40PBF


N-Channel 900 V 4.7A (Tc) 150W (Tc) Through Hole TO-247AC
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Vishay 4696
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AUD 3.3493
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         Through HoleTO - 247 - 3TubeSi      
SI2310


60V 3A 105O@10V,3A 350mW N Channel SOT-23 MOSFETs ROHS
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Microdiode Electronics 4685
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AUD 0.0437
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IPT012N08N5


MOSFET TRENCH 40<-<100V
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Infineon 4536
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AUD 2.129
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IRLML0040TRPBF-JSM


SOT-23-3 MOSFETs ROHS
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JSMSEMI 4442
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AUD 0.0627
Multiples of: 10

                   
NCV8402ADDR2G


ON Semiconductor MOSFET 42V 2.0A
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ON Semiconductor 2227
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AUD 0.8477
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110 A55 V165 mOhmsN - Channel    800 mWSmd/SmtSO - 8ReelSi2 Channel   Aec - Q101 
PNM723T703E0-2


MOSFET N Trench 40V 180mA 1.5V @ 250uA 7.5 Ω @ 500mA,10V SOT-723 RoHS
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Prisemi 2134
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AUD 0.0248
Multiples of: 20

                   
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