MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIR422DP-T1-GE3


MOSFET 40V 40A N-CH MOSFET
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Vishay 9409
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AUD 1.0179
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel       
KCY3310A


PDFNWB-8L-EP(5x6) MOSFETs ROHS
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KIA 4743
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AUD 0.753
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TSM051N04LCP ROG


MOSFET MOSFET, Single, N-Ch Trench, 40V, 96A
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Taiwan Semiconductor 4742
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AUD 1.8615
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96 A40 V4.3 mOhmsN - Channel 1.2 V- 55 C+ 150 C89 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V44.5 nCEnhancement  
FDS8984


Transistor: N-MOSFET x2; unipolar; 30V; 7A; 1.6W; SO8
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ON Semiconductor 4738
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AUD 0.3916
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   Dual N Channel               
TSM900N10CP ROG


MOSFET 100V 15A Single N-Channel Power MOSFET
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Taiwan Semiconductor 4738
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AUD 1.3904
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           Cut Tape       
PJQ4439EP-AU_R2_002A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 4735
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AUD 0.3331
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9 A30 V19.1 mOhmsP - Channel 2.5 V- 55 C+ 175 C30 WSMD/SMTDFN - 3333 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V22 nCEnhancementAEC - Q101 
SP30N10NJ


PDFNWB-8L(3.3x3.3) MOSFETs ROHS
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Siliup 4733
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AUD 0.0405
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STN4NF20L


SOT-223 MOSFETs ROHS
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TECH PUBLIC 4728
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AUD 0.3047
Multiples of: 5

                   
YFW120N04NF


PDFN-8L(5x6) MOSFETs ROHS
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YFW Electronics 4692
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AUD 0.4544
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IPS70R600P7SAKMA1


700V 8.5A 43W 600mO@1.8A,10V N Channel TO-251-3 MOSFETs ROHS
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Infineon 1450
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AUD 0.4588
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8.5 A700 V490 mOhmsN - Channel 2.5 V- 40 C+ 150 C43.1 WThrough HoleTO - 251 - 3TubeSi1 Channel16 V10.5 nCEnhancement Coolmos
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